OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2STF1360

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
This is information on a product in full production.
August 2012 Doc ID 11783 Rev 3 1/16
16
2STD1360, 2STF1360, 2STN1360
Low voltage fast-switching NPN power transistors
Datasheet − production data
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed
Applications
■ Emergency lighting
■ LED
■ Voltage regulation
■ Relay drive
Description
This device is an NPN transistor manufactured
using new low voltage planar technology with
double metal process. The result is a transistor
which boasts exceptionally high gain performance
coupled with very low saturation voltage.
The complementary PNP types are the
2STD2360T4, the 2STF2360 and the 2STN2360.
Figure 1. Internal schematic diagram
TO-252 (DPAK)
4
3
2
1
1
2
4
3
1
3
SOT-223 SOT-89
TAB
Table 1. Device summary
Order codes Marking Packages Packaging
2STD1360T4 2STD1360 DPAK Tape and reel
2STF1360 1360 SOT-89 Tape and reel
2STN1360 N1360 SOT-223 Tape and reel
www.st.com
Absolute maximum ratings 2STD1360, 2STF1360, 2STN1360
2/16 Doc ID 11783 Rev 3
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit2STD1360 2STF1360 2STN1360
DPAK SOT-89 SOT-223
V
CBO
Collector-base voltage (I
E
= 0) 80 V
V
CEO
Collector-emitter voltage (I
B
= 0) 60 V
V
EBO
Emitter-base voltage (I
C
= 0) 6 V
I
C
Collector current 3 A
I
CM
Collector peak current (t
P
< 5 ms) 5 A
I
B
Base current 0.2 A
I
BM
Base peak current (t
P
< 5 ms) 0.4 A
P
TOT
Total dissipation at T
amb
= 25 °C 15 1.4 1.6 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter DPAK SOT-89 SOT-223 Unit
R
thJA
(1)
1. Device mounted on a PCB area of 1 cm
2
Thermal resistance junction-ambient ___ _Max 8.3 89 78 °C/W
2STD1360, 2STF1360, 2STN1360 Electrical characteristics
Doc ID 11783 Rev 3 3/16
2 Electrical characteristics
T
CASE
= 25°C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 80 V 100 nA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 6 V 100 nA
V
BE(on)
Base-emitter on voltage V
CE
= 2 V I
C
= 100 mA 630 650 730 mV
V
CE(sat)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter
saturation voltage
I
C
= 2 A I
B
= 100 mA
I
C
= 3 A _ I
B
= 150 mA
130
180
300
500
mV
mV
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 2 A _ I
B
= 100 mA 0.9 1.2 V
h
FE
(1)
DC current gain
I
C
= 100 mA_ V
CE
= 2 V
I
C
= 1 A _ V
CE
= 2 V
80
160 400
t
d
t
r
t
s
t
f
Resistive load
Delay time
Rise time
Storage time
Fall time
I
C
= 3 A V
CC
= 10 V
I
B(on)
= - I
B(off)
= 300 mA
V
BE(off)
= - 5 V
17
81
620
54
20
100
720
65
ns
ns
ns
ns
f
T
Transition frequency I
C
= 0.1 A __ V
CE
= 10 V 130 MHz
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

2STF1360

Mfr. #:
Buy 2STF1360
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT LOW VOLTAGE FAST SWITCHING NPN POWER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet