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AD779JN

P1-P3P4-P6P7-P9P10-P12P13-P13
DC SPECIFICATIONS
AD779J/A/S AD779K/B/T
Parameter Min Typ Max Min Typ Max Units
TEMPERATURE RANGE
J, K Grades 0 +70 0 +70 °C
A, B Grades –40 +85 –40 +85 °C
S, T Grades –55 +125 –55 +125 °C
ACCURACY
Resolution 14 14 Bits
Integral Nonlinearity (INL) ±2 ±1 ±2 LSB
Differential Nonlinearity (DNL) 14 14 Bits
Unipolar Zero Error
1
(@ +25°C) 0.08 0.05 0.07 % FSR*
Bipolar Zero Error
1
(@ +25°C) 0.08 0.05 0.07 % FSR
Gain Error
1, 2
(@ +25°C) 0.12 0.09 0.11 % FSR
Temperature Drift
Unipolar Zero
3
J, K Grades 0.04 0.04 0.05 % FSR
A, B Grades 0.05 0.05 0.07 % FSR
S, T Grades 0.09 0.09 0.10 % FSR
Bipolar Zero
3
J, K Grades 0.02 0.02 0 04 % FSR
A, B Grades 0.04 0.04 0.06 % FSR
S, T Grades 0.08 0.08 0.09 % FSR
Gain
3
J, K Grades 0.09 0.09 0.11 % FSR
A, B Grades 0.10 0.10 0.16 % FSR
S, T Grades 0.20 0.20 0.25 % FSR
Gain
4
J, K Grades 0.04 0.04 0.05 % FSR
A, B Grades 0.05 0.05 0.07 % FSR
S, T Grades 0.09 0.09 0.10 % FSR
ANALOG INPUT
Input Ranges
Unipolar Mode 0 +10 0 +10 V
Bipolar Mode –5 +5 –5 +5 V
Input Resistance 10 10 MΩ
Input Capacitance 10 10 pF
Input Settling Time 1.5 1.5 µs
Aperture Delay 10 10 ns
Aperture Jitter 150 150 ps
INTERNAL VOLTAGE REFERENCE
Output Voltage
5
4.98 5.02 4.98 5.02 V
External Load
Unipolar Mode +1.5 +1.5 mA
Bipolar Mode +0.5 +0.5 mA
POWER SUPPLIES
Power Supply Rejection
V
CC
= +12 V ± 5% ±6 ±6 LSB
V
EE
= –12 V ± 5% ±6 ±6 LSB
V
DD
= +5 V ± 10% ±6 ±6 LSB
Operating Current
I
CC
18 20 18 20 mA
I
EE
25 34 25 34 mA
I
DD
8 12 8 12 mA
Power Consumption 560 745 560 745 mW
NOTES
1
Adjustable to zero. See Figures 5 and 6.
2
Includes internal voltage reference error.
3
Includes internal voltage reference drift.
4
Excludes internal voltage reference drift.
5
With maximum external load applied.
*% FSR = percent of full-scale range.
Specifications subject to change without notice.
AD779
REV. B
–3–
(T
MIN
to T
MAX
, V
CC
= +12 V 6 5%, V
EE
= –12 V 6 5%, V
DD
= +5 V 6 10% unless otherwise noted)
AD779
–4–
REV. B
TIMING SPECIFICATIONS
(All device types T
MIN
to T
MAX
, V
CC
= +12 V 6 5%, V
EE
= –12 V
6 5%, V
DD
= +5 V 6 10%)
Parameter Symbol Min Max Units
Conversion Rate
1
t
CR
7.8 µs
Convert Pulse Width t
CP
0.097 3.0 µs
Aperture Delay t
AD
520ns
Conversion Time t
C
6.3 µs
Status Delay t
SD
0 400 ns
Access Time
2, 3
t
BA
10 100 ns
10 57
4
ns
Float Delay
5
t
FD
10 80 ns
Output Delay t
OD
0ns
OE Delay t
OE
20 ns
Read Pulse Width t
RP
100 ns
Conversion Delay t
CD
400 ns
NOTES
1
Includes Acquisition Time.
2
Measured from the falling edge of OE/EOCEN (0.8 V) to the time at which the
data lines/EOC cross 2.0 V or 0.8 V. See Figure 4.
3
C
OUT
= 100 pF.
4
C
OUT
= 50 pF.
5
Measured from the rising edge of OE/EOCEN (2.0 V) to the time at which the
output voltage changes by 0.5 V. See Figure 4; C
OUT
= 10 pF.
Specifications subject to change without notice.
Figure 1. Conversion Timing
Figure 2. Output Timing
Figure 3. EOC Timing
Figure 4. Load Circuit for Bus Timing Specifications
AD779
–5–
REV. B
ESD SENSITIVITY
The AD779 features input protection circuitry consisting of large “distributed” diodes and
polysilicon series resistors to dissipate both high energy discharges (Human Body Model) and fast,
low energy pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883C, the AD779
has been classified as a Category 1 device.
Proper ESD precautions are strongly recommended to avoid functional damage or performance
degradation. Charges as high as 4000 volts readily accumulate on the human body and test
equipment and discharge without detection. Unused devices must be stored in conductive foam or
shunts, and the foam should be discharged to the destination socket before devices are removed. For
further information on ESD precautions, refer to Analog Devices’ ESD Prevention Manual.
ABSOLUTE MAXIMUM RATINGS
1
With
Respect
Specification To Min Max Units
V
CC
AGND –0.3 +18 V
V
BE
AGND –18 +0.3 V
V
CC
2
V
EE
–0.3 +26.4 V
V
DD
DGND 0 +7 V
AGND DGND –1 +1 V
AIN, REF
IN
AGND V
EE
V
CC
V
Digital Inputs DGND –0.5 +7 V
Digital Outputs DGND –0.5 V
DD
+0.3 V
Max Junction
Temperature 175 °C
Operating Temperature
J and K Grades 0 +70 °C
A and B Grades –40 +85 °C
S and T Grades –55 +125 °C
Storage Temperature –65 +150 °C
Lead Temperature
(10 sec max) +300 °C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
The AD779 is not designed to operate from ±15 V supplies.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
1
Model
2
Temperature Range Tested and Specified Package Description Package Option
3
AD779JN 0°C to +70°C AC 28-Pin Plastic DIP N-28
AD779KN 0°C to +70°C AC + DC 28-Pin Plastic DIP N-28
AD779JD 0°C to +70°C AC 28-Pin Ceramic DIP D-28
AD779KD 0°C to +70°C AC + DC 28-Pin Ceramic DIP D-28
AD779AD –40°C to +85°C AC 28-Pin Ceramic DIP D-28
AD779BD –40°C to +85°C AC + DC 28-Pin Ceramic DIP D-28
AD779SD –55°C to +125°C AC 28-Pin Ceramic DIP D-28
AD779TD –55°C to +125°C AC + DC 28-Pin Ceramic DIP D-28
NOTES
1
For two cycle read (8+16 bits) interface to 8-bit buses, see AD679.
2
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or current
AD779/883B data sheet.
3
D = Ceramic DIP; N = Plastic DIP.
P1-P3P4-P6P7-P9P10-P12P13-P13

AD779JN

Mfr. #:
Buy AD779JN
Manufacturer:
Analog Devices Inc.
Description:
IC ADC 14BIT SAMPLING 28-DIP
Lifecycle:
New from this manufacturer.
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