DS-25DF021A–042D–11/2015
High Temperature Operation (125°C)
This data sheet addendum is to be used in conjunction with the existing AT25DF021A
datasheet specifications. The Adesto AT25DF021A 2Mbit Serial Flash devices will
operate @ 125°C with the following datasheet caveats. All other parameters will meet
the existing datasheet specifications.
The ordering code suffix (CAN# Code) 'HR' or 'HT' must be used to ensure correct
operation at this extended temperature range. Adesto will not modify and republish the
current datasheet to reflect the CAN# ordering code or the above caveats.The
standard
AT25DF021A datasheet is available at http://www.adestotech.com.
AT25DF021A
2-Mbit, 1.7V-3.6V Minimum
SPI Serial Flash Memory
DATASHEET (ADDENDUM)
1. Electrical Specifications
1.2 DC, AC, Program and Erase Characteristics
1.1 DC and AC Operating Range
AT25DF021A-xxxHR
Operating Temperature -40C to +125C
Endurance (Maximum) 20,000 Cycles
Symbol Parameter
1.7V to 3.6V 2.3V to 3.6V
Units
Min Typ Max Min Typ Max
I
UDPD
Ultra Deep Power-Down Current .2 1 .3 1 µA
I
DPD
Deep Power-Down Current 5 40 8 40 µA
I
SB
Standby Current 25 65 25 65 µA
I
CC3
(1)(2)
Active Current, Program Operation 11 14.5 12 14.5 mA
I
CC4
(1) (2)
Active Current, Erase Operation 11 14.5 12 14.5 mA
f
SCK
Maximum Clock Frequency for All
Operation ( including 0Bh Opcode)
85 85 MHz
f
RDLF
Maximum Clock Frequency for 03h 25 25 MHz
f
RDDO
Maximum Clock Frequency for 3Bh
Opcode
40 40 MHz
t
PP
Page Program Time (256 Bytes) 2 6 2 5 ms
t
PE
Page Erase Time 6 20 6 20 ms
t
BP
Byte Program Time 12 12 µs
t
BLKE
Block Erase Time (4K) 45 100 45 100 ms
Block Erase Time (32K) 300 700 300 700 ms
Block Erase Time (64K) 500 1400 500 1400 ms
t
CHPE
Chip Erase Time 2.5 6 2.5 6 s
