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JAN2N3251A

P1-P3P4-P4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
PNP SILICON
LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/323
T4-LDS-0093 Rev. 2 (101243) Page 1 of 4
DEVICES LEVELS
2N3250A 2N3251A
JAN
2N3250AUB 2N3251AUB
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
60 Vdc
Collector-Base Voltage V
CBO
60 Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
200 mAdc
Total Power Dissipation @ T
A
= +25°C
(1)
@ T
C
= +25°C
(1)
P
T
0.36
1.2
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
(1)
150 °C/W
Note:
1/ Consult 19500/323 for thermal curves
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
60 Vdc
Collector-Emitter Cutoff Voltage
V
BE
= 3.0Vdc, V
CE
= 40Vdc
V
BE
= 3.0Vdc, V
CE
= 40Vdc T
A
= 150°C
I
CEX
20
20
ηAdc
μAdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 40Vdc
I
CBO
10
20
μAdc
ηAdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
I
EBO
10
μAdc
Collector-Emitter Cutoff Voltage
V
BE
= 3.0Vdc, V
CE
= 40Vdc
I
BEX
50
ηAdc
TO-39 (TO-205AD)
UB Package
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0093 Rev. 2 (101243) Page 2 of 4
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
(2)
Forward-Current Transfer Ratio
h
FE
I
C
= 0.1mAdc, V
CE
= 1.0Vdc 2N3250A, AUB
2N3251A, AUB
40
80
I
C
= 1.0mAdc, V
CE
= 1.0Vdc 2N3250A, AUB
2N3251A, AUB
45
90
I
C
= 10mAdc, V
CE
= 1.0Vdc 2N3250A, AUB
2N3251A, AUB
50
100
150
300
I
C
= 50mAdc, V
CE
= 1.0Vdc 2N3250A, AUB
2N3251A, AUB
15
30
I
C
= 1.0mAdc, V
CE
= 1.0Vdc
T
A
= -55°C
2N3250A, AUB
2N3251A, AUB
20
40
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 50mAdc, I
B
= 5.0mAdc
0.25
0.50
Base-Emitter Saturation Voltage
V
BE(sat)
Vdc
I
C
= 10mA, I
B
= 1.0mAdc
I
C
= 50mA, I
B
= 5.0mAdc
0.60 0.90
1.20
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
h
fe
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz 2N3250A, AUB
2N3251A, AUB
50
100
200
400
Magnitude of Common Emitter Small-Signal Short-Circuit Forward
Current Transfer Ratio
|h
fe
|
I
C
= 10mAdc, V
CE
= 20Vdc, f = 100kHz 2N3250A, AUB
2N3251A, AUB
2.5
3.0
9.0
9.0
Output Capacitance
C
obo
pF
V
CB
= 10Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0MHz
6.0
Input Capacitance
C
ibo
pF
V
EB
= 1.0Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1.0MHz
8.0
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
t
on
V
CC
= 3.0Vdc; I
C
= 10mAdc; I
B1
= 1.0mAdc 70
ηs
Turn-Off Time
t
off
ηs
V
CC
= 3.0Vdc; IC = 10mAdc; I
B1
= I
B2
=
1.0mAdc
2N3250A, AUB
2N3251A, AUB
250
300
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0093 Rev. 2 (101243) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled
in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-18).
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
CD .178 .195 4.52 4.95
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.74
LC .100TP 2.54 TP 6
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.70 19.05 7, 8
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .100 2.54
Q .040 1.02 5
TL .028 .048 0.71 1.22 3, 4
TW .036 .046 0.91 1.17 3
r .010 0.25 10
α 45° TP 45° TP 6
P1-P3P4-P4

JAN2N3251A

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Buy JAN2N3251A
Manufacturer:
Microchip / Microsemi
Description:
TRANS PNP 60V 0.2A TO-39
Lifecycle:
New from this manufacturer.
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