BTS115ANKSA1

P1-P3 P4-P6 P7-P9 P10-P10

TEMPFET

®

BTS 115 A

7 04.97

Continuous drain current I

D

= f (T

C

)

Parameter: V

GS

≥ 4.5 V

Typ. gate-source leakage current

I

GSS

= f (T

C

)

Parameter: V

GS

= – 20 V, V

DS

= 0

Forward characteristics of reverse diode

I

F

= f (V

SD

)

Parameter:T

j

, t

p

= 80 µs

Typ. capacitances

C = f (V

DS

)

Parameter: V

GS

= 0, f = 1 MHz

TEMPFET

®

BTS 115 A

8 04.97

Transient thermal impedance Z

thJC

= f (t

p

)

Parameter:D = t

p

/T

TEMPFET

®

BTS 115 A

9 04.97

TO 220 AB Ordering Code

Standard C67078-S5004-A2

TO 220 AB Ordering Code

SMD Version E 3045 C67078-S5004-A8

3.7

9.5

9.9

4.6

0.75

1.05

2.542.54

17.5

2.8

12.8

0.5

2.4

13.5

9.2

15.6

1.3

4.4

GPT05155

1)

3) max. 14.5 by dip tinning press burr max. 0.05

2) dip tinning

1) punch direction, burr max. 0.04

3)

2)

1

P1-P3 P4-P6 P7-P9 P10-P10

BTS115ANKSA1

Mfr. #:

Buy BTS115ANKSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 50V 15.5A TO-220AB

Lifecycle:

New from this manufacturer.

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BTS115ANKSA1