DF2S6.8UFS
2
3.
3.
3.
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Junction temperature
Storage temperature
Symbol
V
ESD
T
j
T
stg
Rating
±8
150
-55 to 150
Unit
kV
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
V
RWM
: Working peak reverse
voltage
V
BR
: Reverse breakdown voltage
V
R
: Reverse voltage
I
BR
: Reverse breakdown current
I
R
: Reverse current
V
C
: Clamp voltage
I
PP
: Peak pulse current
R
DYN
: Dynamic resistance
I
F
: Forward current
V
F
: Forward voltage
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Dynamic resistance
Total capacitance
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Symbol
V
RWM
(1)
V
BR
(1)
I
R
(1)
R
DYN
C
t
V
RWM
(2)
V
BR
(2)
I
R
(2)
Note
(Note 1)
Test Condition
I
BR
= 1 mA
V
RWM
= 5 V
V
R
= 0 V, f = 1 MHz
I
BR
= 1 mA
V
RWM
= 19 V
Min
5.3
22
Typ.
6.8
0.3
1.6
25
Max
5
0.1
19
0.5
Unit
V
V
µA
Ω
pF
V
V
µA
Note 1: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at I
PP
between 3 A to 8 A.
2014-07-23
Rev.5.0
