March 2007 Rev 1 1/10
STTH1202
Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
High junction temperature
Insulated packages
TO-220FPAC
Electrical insulation 1500 V
RMS
TO-220AC Ins
Electrical insulation 2500 V
RMS
Description
The STTH1202 uses ST's new 200V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, and
TO-220AC Ins, this device is intended for use in
low voltage, high frequency inverters, free
wheeling and polarity protection.
Order codes
I
F(AV)
12 A
V
RRM
200 V
T
j
(max) 175° C
V
F
(typ) 0.82 V
t
rr
(typ) 18 ns
Part Number Marking
STTH1202D STTH1202
STTH1202FP STTH1202
STTH1202DI STTH1202DI
TO-220AC
STTH1202D
TO-220AC Ins
STTH1202DI
TO-220FPAC
STTH1202FP
A
A
A
A
K
K
K
K
K
www.st.com
Characteristics STTH1202
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.77 x I
F(AV)
+ 0.015 x I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200
V
V
RSM
Non repetitive peak reverse voltage 200
I
F(RMS)
RMS forward current 30 A
I
F(AV)
Average forward current, δ = 0.5
TO-220AC
T
c
= 140° C
12 ATO-220AC Ins
T
c
= 130° C
TO-220FPAC
T
c
= 105° C
I
FRM
Repetitive peak forward current t
p
= 10 µs F = 5 kHz square 130 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 100 A
T
stg
Storage temperature range -65 to + 175 ° C
T
j
Maximum operating junction temperature 175 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC 2.5
° C/WTO-220AC Ins 3
TO-220FPAC 5
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
10
µA
T
j
= 125° C 10 100
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 12 A
1.0 1.10
V
T
j
= 150° C 0.82 0.95
T
j
= 25° C
I
F
= 15 A
1.15
T
j
= 125° C 0.91 1.05
T
j
= 150° C 0.87 1.0
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH1202 Characteristics
3/10
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
28 35 ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
18 24
I
RM
Reverse recovery current
I
F
= 12 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125° C
5.8 7.5 A
t
fr
Forward recovery time
I
F
= 12 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
110 ns
V
FP
Forward recovery voltage
I
F
= 12 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
2V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
0
20
40
60
80
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I (A)
M
δ
P = 5W
P = 2W
P = 1W
T
δ
=tp/T
tp
I
M
0
20
40
60
80
100
120
140
160
180
200
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
TO-220AC Ins)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
TO-220AC
TO-220AC Ins
0.0
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
TO-220FPAC

STTH1202DI

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Recovery Diode Ultra Fast
Lifecycle:
New from this manufacturer.
Delivery:
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