TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0095 Rev. 2 (101572) Page 2 of 5
APPLICATIONS / BENEFITS
¾ Protection from switching transients and induced RF
¾ Protects TTL, ECL, DTL, MOS, MSI, and other integrated circuits requiring 5.0 V or lower power supplies
¾ Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1 thru 4
¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 thru 4
¾ Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2 & 3
¾ 1N5907 Inherently radiation hard as described in Microsemi MicroNote 050
MAXIMUM RATINGS
¾ 1500 Watts for 10/1000 μs at lead temperature (T
L
) 25
o
C (See Figs. 1, 2, and 4) with repetition rate of 0.01% or
less*
¾ Operating & Storage Temperatures: -65
o
to +175
o
C for 1N5907
¾ THERMAL RESISTANCE (junction to lead): 50
o
C/W for 1N5907
¾ THERMAL RESISTANCE (junction to ambient): 110
o
C/W for 1N5907
¾ DC Power Dissipation* (1N5907): 1 Watt at T
L
<125
o
C 3/8” (10 mm) from body, or 1 Watt at T
A
≤+65
o
C
when mounted on FR4 PC board as described for thermal resistance junction to ambient
¾ Forward surge current: 200 A for 8.3ms half-sine wave at T
A
= +25
o
C
¾ Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
¾ CASE (1N5907): DO-13 (DO-202AA) welded hermetically sealed metal and glass
¾ FINISH: External metal surfaces are Tin-Lead (Sn-Pb) plated and solderable per MIL-STD-750 method 2026
¾ POLARITY: Polarity indicated by diode symbol or cathode band (cathode connected to case for 1N5907)
¾ MARKING: Part number and polarity symbol
¾ WEIGHT: 1.4 grams. (Approx)
¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
¾ See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
