FDFS2P102 Datasheet FDFS2P102 | P1-P3

FDFS2P102

FDFS2P102 Rev. E

FDFS2P102

Integrated P-Channel MOSFET and Schottky Diode

October 2000

2000 Fairchild Semiconductor International

MOSFET Maximum Ratings

T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage -20 V

V

GSS

Gate-Source Voltage

±

20

V

I

D

Drain Current - Continuous

(

Note 1a

)

-3.3 A

- Pulsed -20

Power Dissipation for Dual Operation 2

Power Dissipation for Sin

g

le Operation

(

Note 1a

)

1.6

(Note 1b)

1

P

D

(

Note 1c

)

0.9

W

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150

°

C

Schottky Diode Maximum Ratings

T

A

=25

o

C unless otherwise noted

V

RRM

Repetitive Peak Reverse Voltage 20 V

I

O

Average Forward Current

(Note 1a)

1A

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDFS2P102 FDFS2P102 13 12mm 2500 units

General Description

The FDFS2P102 combines the exceptional performance of

Fairchild's high cell density

MOSFET with a very low forward

voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution

for DC to DC converters. It features a fast switching, low gate

charge MOSFET with very low on-state resistance. The

independently connected Schottky diode allows its use in a variety

of DC/DC converter topologies.

Applications

• DC/DC converters

• Load Switch

• Motor Drives

Features

• –3.3 A, –20 V. R

DS(ON)

= 0.125 Ω @ V

GS

= –10 V

R

DS(ON)

= 0.200 Ω @ V

GS

= –4.5 V.

• V

F

< 0.39 V @ 1 A (T

J

= 125

o

C).

V

F

< 0.47 V @ 1 A.

V

F

< 0.58 V @ 2 A.

• Schottky and MOSFET incorporated into single power

surface mount SO-8 package.

• Electrically independent Schottky and MOSFET pinout for

design flexibility.

A

S

G

C

D

Pin 1

81

72

63

54

A

S

G

C

D

FDFS2P102

FDFS2P102 Rev. E

Electrical Characteristics

T

A

= 25 C unless otherwise noted

S

y

mbol Parameter Test Conditions Min T

yp

Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, I

D

= -250

µ

A

-20 V

-1I

DSS

Zero Gate Voltage Drain Current V

DS

= - 16 V,

V

GS

= 0 V

T

J

= 55

°

C

-10

µ

A

I

GSSF

Gate-Body Forward Leakage V

GS

= 20 V, V

DS

= 0 V 100 nA

I

GSSR

Gate-Body Reverse Leakage V

GS

= -20 V, V

DS

= 0 V -100 nA

On Characteristics

(Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= -250

µ

A

-1 -1.4 -2 V

V

GS

= -10 V, I

D

= -3.3 A 0.100 0.125R

DS(on)

Static Drain-Source On-Resistance

V

GS

= -4.5 V, I

D

= -2.5 A 0.167 0.2

Ω

I

D(on)

On-State Drain Current V

GS

= -10 V, V

DS

= -5 V -10 A

g

FS

Forward Transconductance V

DS

= -10 V, I

D

= -3.3 A 5 S

Dynamic Characteristics

C

iss

Input Capacitance 270 pF

C

oss

Output Capacitance 150 pF

C

rss

Reverse Transfer Capacitance

V

DS

= -10 V, V

GS

= 0 V,

f = 1.0 MHz

45 pF

Switching Characteristics

(Note 2)

t

d(on)

Turn-On Delay Time 8 16 ns

t

r

Turn-On Rise Time 7 14 ns

t

d(off)

Turn-Off Delay Time 17 27 ns

t

f

Turn-Off Fall Time

V

DD

= -15 V, I

D

= -1 A,

V

GS

= -10 V, R

GEN

= 6

Ω

10 1.8 ns

Q

g

Total Gate Charge V

DS

= -5 V, I

D

= -3.3 A,

V

GS

= -10 V,

710nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -1.3 A

V

SD

Drain-Source Diode Forward Voltage V

GS

= 0 V, I

S

= -1.3 A

(Note 2)

-0.8 -1.2 V

Schottky Diode Characteristics

T

J

= 25

°

C

250 uA

I

R

Reverse Leakage V

R

= 20 V

T

J

= 125

°

C

18 mA

V

F

Forward Voltage I

F

= 1 A

T

J

= 25

°

C

0.47 V

T

J

= 125

°

C

0.39

I

F

= 2 A

T

J

= 25

°

C

0.58

T

J

= 125

°

C

0.53

Thermal Characteristics

R

JA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

R

JC

Thermal Resistance, Junction-to-Case

(Note 1)

40

Notes:

1: R

θJA

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

of the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

a) 50° C/W when

mounted on a 1 in

2

pad of 2 oz. copper.

b) 105° C/W when

mounted on a 0.04 in

2

pad of 2 oz. copper.

c) 125° C/W when

mounted on a minimum

pad.

FDFS2P102

FDFS2P102 Rev. E

Typical Characteristics

0.8

1

1.2

1.4

1.6

1.8

2

0 102030405060

I

D

, DIRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 4.0V

5.0V

6.0V

7.0V

10V

4.5V

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 7.6A

V

GS

= 10V

0

10

20

30

40

50

60

23456

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= 5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

0

0.01

0.02

0.03

0.04

0.05

0.06

345678910

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 3.8A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current

and Temperature.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

012345

0

4

8

12

16

20

-V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN-SOURCE CURRENT (A)

DS

D

-4.5V

-4.0V

-6.0V

-3.5V

V = -10V

GS

-7.0V

-5.0V

FDFS2P102

FDFS2P102

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