IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH60N30C3
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= 0.5 • I
C110
, V
CE
= 10V 28 46 S
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
C
ies
3800 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 240 pF
C
res
63 pF
Q
g
101 nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
21 nC
Q
gc
37 nC
t
d(on)
23 ns
t
ri
28 ns
E
on
0.15 mJ
t
d(off)
108 160 ns
t
fi
68 ns
E
off
0.30 0.55 mJ
t
d(on)
22 ns
t
ri
28 ns
E
on
0.26 mJ
t
d(off)
120 ns
t
fi
101 ns
E
off
0.40 mJ
R
thJC
0.42 °C/W
R
thCK
0.21 °C/W
Inductive Load, T
J
= 125
°°
°°
°C
I
C
= 0.5 • I
C110
, V
GE
= 15V
V
CE
= 200V, R
G
= 5Ω
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive Load, T
J
= 25
°°
°°
°C
I
C
= 0.5 • I
C110
, V
GE
= 15V
V
CE
= 200V, R
G
= 5Ω
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
