IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 20N60Q
IXFT 20N60Q
Fig. 11. Capacitance
10 0
10 0 0
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - p
C
iss
C
oss
C
rss
f = 1 M Hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0 20406080100
Q
G
- nanoCoulombs
V
GS
- Volts
V
DS
= 300V
I
D
= 1 0A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
3.544.555.566.57
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
1 25ºC
Fig. 12. Maximum T ransient T hermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th)JC
-
(ºC/W)
Fig. 8. T ransconductance
0
6
12
18
24
30
36
42
0 102030405060
I
D
- Amperes
G
fs
- Siemens
T
J
= -40ºC
25ºC
1 25ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
10
20
30
40
50
60
0.3 0.5 0.7 0.9 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 1 25ºC
T
J
= 25ºC
