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512Mb Mobile SDRAM_TwinDie_x32.fm - Rev. C 6/05 EN
6 ©2004 Micron Technology, Inc. All rights reserved.
512Mb : x32 TwinDie Mobile SDRAM Addendum
Electrical Specifications
Table 5: DC Electrical Characteristics and Operating Conditions (H version)
VDD = +1.8V ±0.1V VDDQ = +1.8V ±0.1V
Notes: 1, 5, 6; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes.
Parameter/Condition Symbol MIN MAX Units Notes
Supply Voltage
VDD/VDDQ 1.7 1.9 V
Input High Voltage: Logic 1; All inputs
VIH
0.8 x VDDQ
VDDQ + 0.3 V22
Input Low Voltage: Logic 0; All inputs
VIL -0.3 0.3 V 22
Input Leakage Current:
Any input 0V ≤ V
IN ≤ VDD
(All other balls not under test = 0V)
II -1.0 1.0 µA
Output Leakage Current: DQs are disabled; 0V ≤ V
OUT ≤
V
DDQ
IOZ -1.5 1.55 µA
Output Levels:
Output High Voltage (IOUT = -4mA)
V
OH 0.9 x VDDQ – V
Output Low Voltage (IOUT = 4mA)
V
OL –0.2V
Table 6: IDD Specifications and Conditions (LC version)
VDD = +3.3V ±0.3V, VDDQ = +3.3V ±0.3V
Notes: 1, 5, 6, 11, 13; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes.
MAX
Parameter/Condition Symbol -8 -10 Units Notes
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
RC =
t
RC (MIN)
I
DD1 210 185 mA 3, 18, 19, 28
Standby Current: Power-Down Mode; All banks idle; CKE
= LOW
I
DD2N 800 800 µA 32
Standby Current: Power-Down Mode; All banks idle; CKE
= HIGH
I
DD2NS 60 60 mA
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
t
RCD met; No accesses in progress
I
DD3NS 80 80 mA 3, 12, 19, 28
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
I
DD3N 60 60 mA
Operating Current: Burst Mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle.
I
DD4 165 140 mA 3, 18, 19, 28
Auto Refresh Current
CKE = HIGH; CS# = HIGH
t
RFC =
t
RFC
(MIN)
I
DD5 300 250 mA 3, 12, 18, 19,
28, 29
t
RFC = 7.8µs
I
DD65.05.0mA
Deep power down
I
ZZ 20 20 µA