FDD6680A/FDU6680A Rev. D(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
Drain-Source Avalanche Energy Single Pulse, V
DD
= 15 V, I
D
= 14A 174 mJ
I
AS
Drain-Source Avalanche Current 14 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA,Referenced to 25°C
26
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1
µA
I
GSS
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V ±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.8 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA,Referenced to 25°C
–5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 14 A
V
GS
= 4.5 V, I
D
= 12 A
V
GS
= 10 V, I
D
= 14 A,T
J
=125°C
7
10
11
9.5
13
16
mΩ
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 50 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 14 A 56 S
Dynamic Characteristics
C
iss
Input Capacitance 1425 pF
C
oss
Output Capacitance 350 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
150 pF
R
G
Gate Resistance V
OSC
= 15 mV, f = 1.0 MHz 1.3
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 11 20 ns
t
r
Turn–On Rise Time 9 18 ns
t
d(off)
Turn–Off Delay Time 31 50 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
13 23 ns
Q
g
Total Gate Charge 14 20 nC
Q
gs
Gate–Source Charge 4 nC
Q
gd
Gate–Drain Charge
V
DS
= 15V, I
D
= 14 A,
V
GS
= 5 V
5 nC
