298 Photomicrosensor (Reflective) EE-SY125
Photomicrosensor (Reflective)
EE-SY125
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact model.
• PCB surface mounting type
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Ordering Information
■ Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
A
K
C
E
Unless otherwise specified, the
tolerances are ±0.15 mm.
Item Symbol Rated value
Emitter Forward current I
F
50 mA (see note 1)
Pulse forward
current
I
FP
1 A (see note 2)
Reverse voltage V
R
4 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
5 V
Collector current I
C
20 mA
Collector
dissipation
P
C
75 mW (see note 1)
Ambient
temperature
Operating Topr –25°C to 85°C
Storage Tstg –40°C to 100°C
Soldering temperature Tsol 260°C (see note 3)
Description Model
Photomicrosensor (reflective) EE-SY125
Item Symbol Value Condition
Emitter Forward voltage V
F
1.2 V typ., 1.4 V max. I
F
= 20 mA
Reverse current I
R
0.01 µA typ., 10 µA max. V
R
= 4 V
Peak emission wavelength λ
P
950 nm typ. I
F
= 4 mA
Detector Light current I
L
50 µA min., 300 µA max. I
F
= 4 mA, V
CE
= 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current I
D
2 nA typ., 200 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
200 nA max. I
F
=4 mA, V
CE
= 2 V with no reflection
Collector–Emitter saturated
voltage
V
CE
(sat) --- ---
Peak spectral sensitivity
wavelength
λ
P
930 nm typ. V
CE
= 10 V
Rising time tr 35 µs typ. V
CC
= 2 V, R
L
= 1 kΩ, I
L
= 100 µA
Falling time tf 25 µs typ. V
CC
= 2 V, R
L
= 1 kΩ, I
L
= 100 µA
