©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2784
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE2
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 120 V
V
CEO
Collector-Emitter Voltage 120 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 50 mA
I
B
Base Current 10 mA
P
C
Collector Power Dissipation 300 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=120V, I
E
=0 50 nA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 50 nA
h
FE1
h
FE2
DC Current Gain V
CE
=6V, I
C
=0.1mA
V
CE
=6V, I
C
=1mA
150
200
580
600 1200
V
BE
(on) Base Emitter On Voltage V
CE
=6V, I
C
=1mA 0.55 0.59 0.65 V
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.07 0.3 V
f
T
Current Gain Bandwidth Product V
CE
=6V, I
C
=1mA 50 110 MHz
C
ob
Output Capacitance V
CB
=30V, I
E
=0, f=1MHz 1.6 2.5 pF
NL Noise Level 25 40 mV
Classification P F E U
h
FE2
200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200
KSC2784
Audio Frequency Low Noise Amplifier
• Complement to KSA1174
1.Emitter 2. Collector 3. Base
TO-92S
1