KSC2784FTA

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2784
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE2
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 120 V
V
CEO
Collector-Emitter Voltage 120 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 50 mA
I
B
Base Current 10 mA
P
C
Collector Power Dissipation 300 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=120V, I
E
=0 50 nA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 50 nA
h
FE1
h
FE2
DC Current Gain V
CE
=6V, I
C
=0.1mA
V
CE
=6V, I
C
=1mA
150
200
580
600 1200
V
BE
(on) Base Emitter On Voltage V
CE
=6V, I
C
=1mA 0.55 0.59 0.65 V
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.07 0.3 V
f
T
Current Gain Bandwidth Product V
CE
=6V, I
C
=1mA 50 110 MHz
C
ob
Output Capacitance V
CB
=30V, I
E
=0, f=1MHz 1.6 2.5 pF
NL Noise Level 25 40 mV
Classification P F E U
h
FE2
200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200
KSC2784
Audio Frequency Low Noise Amplifier
Complement to KSA1174
1.Emitter 2. Collector 3. Base
TO-92S
1
©2002 Fairchild Semiconductor Corporation
KSC2784
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristics Figure 2. Static Characteristics
Figure 3. DC Currnet Gain Figure 4. Saturation Voltage
Figure 5. f
T
- I
C
Figure 6. Output Capacitance
012345
0
2
4
6
8
10
I
B
= 8
µ
A
I
B
= 4
µ
A
I
B
= 12
µ
A
I
B
= 16
µ
A
I
B
= 14
µ
A
I
B
= 10
µ
A
I
B
= 6
µ
A
I
B
= 2
µ
A
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 20406080100
0.0
0.2
0.4
0.6
0.8
1.0
I
B
= 1.4
µ
A
I
B
= 1.2
µ
A
I
B
= 1.0
µ
A
I
B
= 0.8
µ
A
I
B
= 0.6
µ
A
I
B
= 0.4
µ
A
I
B
= 0.2
µ
A
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10 100
0
200
400
600
800
1000
V
CE
= 6 V
Pulse Test
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
I
C
= 10 I
B
Pulse Test
V
BE
(sat)
V
CE
(sat)
V
CE
(sat), V
BE
(sat) [V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
V
CE
= 10V
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
110100
0.1
1
10
f = 1 MHz
I
E
= 0
C
ob
[pF], OUTPUT CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
4.00
±0.20
3.72
±0.20
2.86
±0.20
2.31
±0.20
3.70
±0.20
0.77
±0.10
14.47
±0.30
(1.10)
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35
+0.10
–0.05
TO-92S
Package Dimensions
KSC2784
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2784FTA

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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