SS3P5, SS3P6
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Vishay General Semiconductor
Revision: 02-Feb-17
1
Document Number: 88997
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High Current Density Surface Mount Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 60 V
I
FSM
45 A
E
AS
11.25 mJ
V
F
at I
F
= 3.0 A 0.61 V
T
J
max. 150 °C
Package DO-220AA (SMP)
Diode variations Single die
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS3P5 SS3P6 UNIT
Device marking code 35 36
Maximum repetitive peak reverse voltage V
RRM
50 60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I
FSM
45 A
Non-repetitive avalanche energy at T
J
= 25 °C, I
AS
= 1.5 A, L = 10 mH E
AS
11.25 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C