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DMG3402L-7

P1-P3P4-P6
DMG3402L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
Applications
• DC-DC Converters
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
30V
52mΩ @ V
GS
= 10V
4A
65mΩ @ V
GS
= 4.5V
3A
85mΩ @ V
GS
= 2.5V
2A
Features
• Low On-Resistance:
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG3402L-7
SOT23
3000/Tape & Reel
DMG3402L-13
SOT23
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http//:www.diodes.com/products/packages.html.
Marking Information
Date Code Key
2012
2013
2014
2015
2016
2017
2018
Z
A
B
C
D
E
F
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
SOT23
TOP VIEW
D
G
S
Pin Configuration
N32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
e3
N32
YM
D
S
G
Equivalent Circuit
DMG3402L
Document number: DS36077 Rev. 3 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMG3402L
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 5)
I
D
4.0
A
Body-Diode Continuous Current (Note 5)
I
S
1.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
1.4
W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
θJA
90
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1
µA
V
DS
= 30V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±100
nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.6
—
1.4
V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
—
—
—
52
65
85
mΩ
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 2A
Forward Transconductance
|Y
fs
|
6.6
S
V
DS
= 5V, I
D
= 3.1A
Source-Drain Diode Forward Voltage
V
SD
1.16
V
V
GS
= 0V, I
S
= 2.0A
DYNAMIC CHARACTERISTICS(Note 7)
Gate Resistance
R
g
2.2
Ω
V
DS
=0V, V
GS
= 0V,
f = 1MHz
Total Gate Charge (10V)
Q
g
11.7
nC
V
GS
= 10 V, V
DS
= 15V,
I
D
= 4 A
Total Gate Charge (4.5V)
Q
g
5.5
nC
V
GS
=10 V, V
DS
= 15V,
I
D
= 4 A
Gate-Source Charge
Q
gs
1.1
nC
Gate-Drain Charge
Q
gd
1.8
nC
Turn-On Delay Time
t
D(on)
1.9
ns
V
DD
= 15V, V
GEN
= 10V,
R
GEN
=3Ω, R
L
= 3.75Ω
Turn-On Rise Time
t
r
1.6
ns
Turn-Off Delay Time
t
D(off)
10.3
ns
Turn-Off Fall Time
t
f
2.0
ns
Input Capacitance
C
iss
464
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
49.5
pF
Reverse Transfer Capacitance
C
rss
43.8
pF
Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMG3402L
Document number: DS36077 Rev. 3 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMG3402L
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
0.0
2.0
4.0
6.0
8.0
10.0
V = 1.5V
GS
V = 2.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
V = 3.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I ,
DRA
IN
CUR
REN
T (A
)
D
0
2
4
6
8
10
12
14
16
18
20
0 1
2
3 4
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0.01
0.1
1
1 3 5 7
9
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
0
4
8 12
16 20
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I = 3A
GS
D
V=V
I = 6A
GS
D
10
V = .5V
I = 2A
GS
D
2
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
V = 4.5V
I = 3A
GS
D
V=V
I = 6A
GS
D
10
V = .5V
I = 2A
GS
D
2
DMG3402L
Document number: DS36077 Rev. 3 - 2
3 of 6
www.diodes.com
August 2014
© Diodes Incorporated
P1-P3P4-P6

DMG3402L-7

Mfr. #:
Buy DMG3402L-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET FET BVDSS 25V 30V N-Ch 305pF 8.2nC
Lifecycle:
New from this manufacturer.
Delivery:
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