MJE13009G
http://onsemi.com
9
Table 3. Typical Inductive Switching Performance
I
C
AMP
T
C
_C
t
sv
ns
t
rv
ns
t
fi
ns
t
ti
ns
t
c
ns
3 25
100
770
1000
100
230
150
160
200
200
240
320
5 25
100
630
820
72
100
26
55
10
30
100
180
8 25
100
720
920
55
70
27
50
2
8
77
120
12 25
100
640
800
20
32
17
24
2
4
41
54
NOTE: All Data recorded In the Inductive Switching Circuit In Table 1.
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
t
sv
= Voltage Storage Time, 90% I
B1
to 10% V
CEM
t
rv
= Voltage Rise Time, 10−90% V
CEM
t
fi
= Current Fall Time, 90−10% I
CM
t
ti
= Current Tail, 10−2% I
CM
t
c
= Crossover Time, 10% V
CEM
to 10% I
CM
An enlarged portion of the turn−off waveforms is shown
in Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN222/D:
P
SWT
= 1/2 V
CC
I
C
(t
c
) f
Typical inductive switching waveforms are shown in
Figure 14. In general, t
rv
+ t
fi
] t
c
. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (t
c
and t
sv
) which are guaranteed at 100_C.
