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74LVC08AS14-13

P1-P3P4-P6P7-P9P10-P10
74LVC08A
Document number: DS35261 Rev. 3 - 2
4 of 10
www.diodes.com
June 2012
© Diodes Incorporated
74LVC08
A
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
T
A
= -40°C to +85°C T
A
= -40°C to +125°C
Unit
Min Max Min Max
V
IH
High-level
Input Voltage
1.65V to 1.95V
0.65 X V
CC
0.65 X V
CC
V
2.3V to 2.7V 1.7 1.6
2.7V to 3.6V 2.0 2.0
V
IL
Low-level
input voltage
1.65V to 1.95V
0.35 X V
CC
0.35 X V
CC
V
2.3V to 2.7V 0.7 0.7
2.7V to 3.6V 0.8 0.8
V
OH
High Level
Output
Voltage
I
OH
= -100μA
1.65V to 3.6V
V
CC
– 0.2
V
CC
– 0.3
V
I
OH
= -4mA
1.65V 1.2
I
OH
= -8mA
2.3V 1.9
I
OH
= -12mA
2.7V 2.2 2.05
3.0V 2.3 2.1
I
OH
= -24mA
3.0V 2.2 2.0
V
OL
High-level
Output
Voltage
I
OH
= 100μA
1.65V to 3.6V 0.2 0.3
V
I
OH
= 4mA
1.65V 0.45 0.6
I
OH
= 8mA
2.3V 0.70 0.85
I
OH
= 12mA
2.7V 0.40 0.6
3.0V 0.55 0.6
I
OH
=-24mA
3.0V 0.55 0.6
I
I
Input Current
V
I
=GND to 5.5V
3.6V ± 5 ± 20 μA
I
OFF
Power Down
Leakage
Current
V
I
or V
O
=
0V to 3.6V
0 10 20 μA
I
CC
Supply
Current
V
I
= GND or V
CC
I
O
=0
3.6V 10
40 μA
ΔI
CC
Additional
Supply
Current
One input at V
CC
–
0.6V Other at V
CC
or
Gnd.
2.7V to 3.6V 500
5000 μA
74LVC08A
Document number: DS35261 Rev. 3 - 2
5 of 10
www.diodes.com
June 2012
© Diodes Incorporated
74LVC08
A
Switching Characteristics
Symbol Parameter
Test
Conditions
V
CC
T
A
= +25°C -40°Cto +85°C -40°Cto +125°C
Unit
Min Typ Max Min Max Min Max
t
PD
Propagation
Delay A
N
or B
N
to Y
N
Figure 1
1.65V to1.95V 1.0 5.0 9.3 1.0 9.8 1.0 11.3
ns
2.3V to 2.7V 1.0 2.9 6.4 1.0 6.9 1.0 9.0
2.7V 1.0 3.0 4.6 1.0 4.8 1.0 6.0
3V to 3.6V 1.0 2.6 3.9 1.0 4.1 1.0 5.5
t
SK(0)
Output Skew
Time
3V to 3.6V 1.0 1.5 ns
Operating Characteristics (@T
A
= +25°C, unless otherwise specified.)
Parameter
Test
Conditions
V
CC
= 1.8V V
CC
= 2.5V V
CC
= 3.3V
Unit
Typ Typ Typ
C
pd
Power dissipation
capacitance per gate
f = 10 MHz 7.0 7.5 8.0 pF
C
I
Input Capacitance
V
i
= V
CC
– or
GND
4 4 4 pF
Package Characteristics
Symbol Parameter Test Conditions V
CC
Min Typ Max Unit
θ
JA
Thermal Resistance
Junction-to-Ambient
SO-14
(Note 6)
TBD
o
C/W
TSSOP-14 159
θ
JC
Thermal Resistance
Junction-to-Case
SO-14
(Note 6)
TBD
o
C/W
TSSOP-14 25
Note: 6. Test condition for SO-14 and TSSOP-14: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74LVC08A
Document number: DS35261 Rev. 3 - 2
6 of 10
www.diodes.com
June 2012
© Diodes Incorporated
74LVC08
A
Parameter Measuement Information
V
CC
Inputs
V
M
C
L
R
L
V
I
t
r
/t
f
1.8V±0.15V
V
CC
≤2ns
V
CC
/2
30pF 1KΩ
2.5V±0.2V
V
CC
≤2ns
V
CC
/2
30pF 500Ω
2.7V 2.7V ≤2.5ns 1.5V 50pF 500Ω
3.3V±0.3V 2.7V ≤2.5ns 1.5V 50pF 500Ω
V
oltage Waveform
Pulse Duration
V
oltage Waveform
Propagation Delay Times
Inverting and Non Inverting Outputs
Notes: A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 10 MHz
C. Inputs are measured separately one transition per measurement
D. t
PLH
and t
PHL
are the same as t
PD
Figure 1. Load Circuit and Voltage Waveforms
P1-P3P4-P6P7-P9P10-P10

74LVC08AS14-13

Mfr. #:
Buy 74LVC08AS14-13
Manufacturer:
Diodes Incorporated
Description:
Logic Gates Quad 2-Input GATE 1.65V to 5.5V 24mA
Lifecycle:
New from this manufacturer.
Delivery:
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