TIPL760B, TIPL760C
NPN SILICON POWER TRANSISTORS
1
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Rugged Triple-Diffused Planar Construction
●
4 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed
at 100°C
●
1200 Volt Blocking Capability
●
75 W at 25°C Case Temperature
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for t
p
≤ 10 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
TIPL760B
TIPL760C
V
CBO
1100
1200
V
Collector-emitter voltage (V
BE
= 0)
TIPL760B
TIPL760C
V
CES
1100
1200
V
Collector-emitter voltage (I
B
= 0)
TIPL760B
TIPL760C
V
CEO
500
550
V
Emitter-base voltage V
EBO
10 V
Continuous collector current I
C
4A
Peak collector current (see Note 1) I
CM
8A
Continuous device dissipation at (or below) 25°C case temperature P
tot
75 W
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3