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2SC4926YD-TL-E

P1-P3P4-P6P7-P9
R07DS0277EJ0400 Rev.4.00 Page 1 of 7
Mar 28, 2011
Preliminary Datasheet
2SC4926
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
f
T
= 11 GHz Typ
• High gain, low noise figure
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
1. Collecto
r
2. Emitter
3. Base
4. Emitter
1
4
3
2
Note: Marking is “YD–”.
Attention: This is electrostatic sensitive device.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
15 V
Collector to emitter voltage V
CEO
8 V
Emitter to base voltage V
EBO
1.5 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
R07DS0277EJ0400
(Previous: REJ03G0735-0300)
Rev.4.00
Mar 28, 2011
2SC4926 Preliminary
R07DS0277EJ0400 Rev.4.00 Page 2 of 7
Mar 28, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V
(BR)CBO
15 — — V I
C
= 10 μA, I
E
= 0
Collector cutoff current I
CBO
— — 10 μA V
CB
= 12 V, I
E
= 0
I
CEO
— — 1 mA V
CE
= 8 V, R
BE
= ∞
Emitter cutoff current I
EBO
— — 10 μA V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio h
FE
50 120 250 V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance Cob — 0.6 1.1 pF
V
CB
= 5 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product f
T
8.0 11.0 — GHz V
CE
= 5 V, I
C
= 20 mA
S
21
Parameter |S
21
|
2
— 16 — dB
V
CE
= 5 V, I
C
= 20 mA,
f = 1000 MHz
Power gain PG 13.5 16.5 — dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure NF — 1.1 2.0 dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
2SC4926 Preliminary
R07DS0277EJ0400 Rev.4.00 Page 3 of 7
Mar 28, 2011
Main Characteristics
15010050
Ambient Temperature Ta (°C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
200
160
120
80
40
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
12 51020 50
V = 5V
CE
0
DC Current Transfer Ratio
vs. Collector Current
12
10
8
6
4
2
12 51020 50
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
V = 5 V
CE
0
Gain Bandwidth Product
vs. Collector Current
0.9
0.8
0.7
0.6
0.5
12 51020
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0.5
I = 0
f = 1 MHz
E
0.4
Collector Output Capacitance vs.
Collector to Base Voltage
20
16
12
8
4
12 51020
Collector Current I
C
(mA)
50
Power Gain PG (dB)
V = 5V
f = 900 MHz
CE
0
Power Gain vs. Collector Current
5
4
3
2
1
1
2
51020
Collector Current I
C
(mA)
50
Noise Figure NF (dB)
0
V = 5V
f = 900MHz
CE
Noise Figure vs. Collector Current
P1-P3P4-P6P7-P9

2SC4926YD-TL-E

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Description:
TRANSISTOR NPN MPAK-4
Lifecycle:
New from this manufacturer.
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