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MS2205
DESCRIPTION:
The MS2205 is a common base, silicon NPN microwave transistor
designed for Class C driver applications under DME or IFF pulse
conditions. This device is capable of withstanding an infinite load
VSWR at any phase angle under rated conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation 7.5 W
V
CE
Collector-Emitter Bias Voltage 37 V
T
J
Junction Temperature 200
ºC
I
C
Device Current 1.0 A
T
STG
Storage Temperature -65 to +200
ºC
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance* 35
°C/W
Revision 1
Features
• 1025-1150 MHz
• GOLD METALLIZATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• Pout = 4 W MINIMUM
• G
P
= 10 dB
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.280 2LFL (M220)
Epoxy Sealed
