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VS-245NQ015PBF

P1-P3P4-P6
VS-245NQ015PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
1
Document Number: 94464
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 240 A
FEATURES
• 125 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-245NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
240 A
V
R
15 V
Package HALF-PAK (D-67)
Circuit Single diode
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 240 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 20 000 A
V
F
240 A
pk
, T
J
= 75 °C 0.37 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-245NQ015PbF UNITS
Maximum DC reverse voltage V
R
15
V
Maximum working peak reverse voltage V
RWM
25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 73 °C, rectangular waveform 240
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
20 000
10 ms sine or 6 ms rect. pulse 3000
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 5 A, L = 1 mH 12 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-245NQ015PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
2
Document Number: 94464
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
240 A
T
J
= 25 °C
0.52
V
480 A 0.61
240 A
T
J
= 125 °C
0.37
480 A 045
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
80
mA
T
J
= 125 °C 4000
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 15 800 pF
Typical series inductance L
S
From top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
0.19
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.05
Approximate weight
30 g
1.06 oz.
Mounting torque
minimum
Non-lubricated threads
3 (26.5)
N · m
(lbf · in)
maximum 4 (35.4)
Terminal torque
minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1
10
100
1000
Tj = 25°C
Tj = 75°C
Tj = 100°C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (mA)
0 3 6 9 12 15
1
10
100
1000
10 000
25°C
75°C
100°C
VS-245NQ015PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
3
Document Number: 94464
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
V
R
-
Reverse Voltage (V)
C -
Junction
Capacitance (pF)
0 5 10 15 20 25 30
1000
10 000
100 000
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
Allowable Case Temperature (°C)
I
F(AV)
-
Average
Forward Current (A)
0 40 80 120 160 200 240 280 320 360
0
20
40
60
80
100
120
DC
see note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
Average Power Loss (W)
I
F(AV)
-
Average
Forward Current (A)
0 50 100 150 200 250 300 350
0
50
100
150
200
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
P1-P3P4-P6

VS-245NQ015PBF

Mfr. #:
Buy VS-245NQ015PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 240 Amp 15 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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