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TST20H150CW C0G

P1-P3P4-P5
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
V
RRM
V
dV/dt V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
I
F
= 5A
0.57 - 0.62 - 0.72 - 0.77 -
I
F
= 10A
0.67 0.79 0.78 0.89 0.81 0.90 0.83 0.93
I
F
= 5A
0.50 - 0.53 - 0.58 - 0.62 -
I
F
= 10A
0.59 0.68 0.63 0.72 0.66 0.75 0.68 0.78
T
J
= 25°C
- 200 - 200 - 100 - 100 μA
T
J
= 125°C
8251030315315mA
R
θJC
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1411058 Version: E14
- 55 to +150
- 55 to +150
2.8
TST20H
100CW
100
150
10
20
10000
120 150
I
R
A
TST20H
200CW
200
UNIT
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-220AB
TST20H100CW thru TST20H200CW
TST20H
120CW
TST20H
150CW
TYPICAL APPLICATIONS
MECHANICAL DATA
Case: TO-220AB
Polarity: As marked
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
V
F
Instantaneous forward
voltage per diode
(Note1)
T
J
= 25°C
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise noted)
PARAMETER SYMBOL
T
J
= 125°C
Voltage rate of change (Rated V
R
)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Maximum repetitive peak reverse voltage
Maximum average
forward rectified current
per device
I
F(AV)
per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
I
FSM
Typical thermal resistance per diode
A
V
Document Number: DS_D1411058 Version: E14
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
o
C unless otherwise noted)
TST20H120CW C0G
TST20HXXXCW
(Note 1)
G
Note 1: "XXX" defines voltage from 100V (TST20H100CW) to 200V (TST20H200CW)
TO-220AB
TST20H120CW
EXAMPLE
PREFERRED
PART NO.
PART NO.
PACKING CODE
SUFFIX
TST20H100CW thru TST20H200CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
SUFFIX
PACKAGEPACKING CODE
PACKING CODE
50 / Tube
PACKING
Green compound
DESCRIPTION
C0
GC0
0
5
10
15
20
25
0 255075100125150
FIG. 1 FORWARD CURRENT DERATING CURVE
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
CASE TEMPERATURE (
o
C)
AVERAGE FORWARD CURRENT (A)
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
TST20H100CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
TST20H150CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
TST20H120CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
Document Number: DS_D1411058 Version: E14
TST20H100CW thru TST20H200CW
Taiwan Semiconductor
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
TST20H150CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
10
100
1000
10000
0.1 1 10 100
FIG. 10 TYPICAL JUNCTION CAPACTIANCE
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
TST20H200CW
TST20H150CW
TST20H100CW
TST20H120CW
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
TST20H200CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (mA)
TST30H120CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
INSTANTANEOUS REVERSE CURRENT (mA)
TST20H120CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
TST20H100CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT
(mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
TST20H200CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
P1-P3P4-P5

TST20H150CW C0G

Mfr. #:
Buy TST20H150CW C0G
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers Dual Trench schottky 20amp 150v
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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