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PTVS3-380C-TH

P1-P3
Features
n 3 kA, 8/20 µs surge capability
n Low clamping voltage under surge
n Bidirectional TVS
n Excellent performance over temperature
Applications
n AC line protection
n High power DC bus protection
Absolute Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
PTVS3-xxxC-TH Series
High Voltage, High Current TVS Diodes
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
General Information
The Model PTVS3-xxxC-TH high voltage, bidirectional TVS diode series is designed for
use in AC line and high power DC bus clamping applications.
The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current
surge requirements.
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Test Conditions Min. Typ. Max. Unit
I
D
Standby Current V
D
= V
WM
10 µA
V
(BR)
Breakdown Voltage I
BR
= 10 mA
PTVS3-380C-TH
PTVS3-430C-TH
401
440
422
465
443
490
V
V
C
Clamping Voltage
(1)
I
PP
= 3 kA
PTVS3-380C-TH
PTVS3-430C-TH
520
580
V
V
(BR)
Temperature Coefcient 0.1 %/°C
C Capacitance
F = 10 kHz,
V
d
= 1 Vrms
PTVS3-380C-TH
PTVS3-430C-TH
0.35
0.40
nF
Asia-Pacic: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
(1)
V
C
measured at the time which is coincident with the peak surge current.
Rating Symbol Value Unit
Repetitive Standoff Voltage
PTVS3-380C-TH
PTVS3-430C-TH
V
WM
380
430
V
Peak Current Rating per 8/20 µs IEC 61000-4-5 I
PPM
3 kA
Operating Junction Temperature Range T
J
-55 to +125 °C
Storage Temperature Range T
S
-55 to +150 °C
Lead Temperature, Soldering (10 s) 260 °C
PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Performance Graphs
V-I Characteristic Typical V
BR
vs. Junction Temperature
Typical Surge Current Derating Current 8/20 µs Waveform per IEC 61000-4-5
This graph shows the typical device surge current derating
versus ambient temperature when subjected to the 8/20 µs
current waveform per the IEC 61000-4-5 specication.
This device is not intended for continuous operation at
temperatures above 125 °C.
Exposed
DC
Power
Interface
+
-
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 200 400 600
Voltage (V)
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 100 600
Voltage (V)
200 300 400 500
Current (kA)
Voltage (V)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
700
500
600
200
300
400
100
0
-100
01050
Time (µs)
20 30 40
Current
Voltage
Current
Voltage
Current (A)
Voltage (V)
3.5
2.0
2.5
3.0
0.5
1.0
1.5
0
-0.5
700
400
500
600
100
200
300
0
-100
05 40
Time (µs)
10 2015 25 30 35
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
Current
Voltage
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
T
Current
Voltage
120
0
0
25 50 10075 125 150 175
Ambient Temperature (°C)
Percent of Rated Value
Percent of V
BR
Change
16
6
8
10
12
14
0
2
4
-4
-6
-8
-40
-20 0 20 40 60 80 100 120 140 160
Junction Temperature (T
J
) - °C
25 °C
20
40
60
80
100
120
0
03025201510
5
IPP – Peak Pulse Current (% of IPP)
t – Time (µs)
Test Waveform Parameters
t
t = 8 µs
t
d = 20 µs
t
t
e
t
td = t
|
IPP/2
110
100
90
80
70
60
50
40
30
20
10
Exposed
DC
Power
Interface
+
-
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 200 400 600
Voltage (V)
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 100 600
Voltage (V)
200 300 400 500
Current (kA)
Voltage (V)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
700
500
600
200
300
400
100
0
-100
01050
Time (µs)
20 30 40
Current
Voltage
Current
Voltage
Current (A)
Voltage (V)
3.5
2.0
2.5
3.0
0.5
1.0
1.5
0
-0.5
700
400
500
600
100
200
300
0
-100
05 40
Time (µs)
10 2015 25 30 35
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
Current
Voltage
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
T
Current
Voltage
120
0
0
25 50 10075 125 150 175
Ambient Temperature (°C)
Percent of Rated Value
Percent of V
BR
Change
16
6
8
10
12
14
0
2
4
-4
-6
-8
-40
-20 0 20 40 60 80 100 120 140 160
Junction Temperature (T
J
) - °C
25 °C
20
40
60
80
100
120
0
03025201510
5
IPP – Peak Pulse Current (% of IPP)
t – Time (µs)
Test Waveform Parameters
t
t = 8 µs
t
d = 20 µs
tt
e
t
td = t
|
IPP/2
110
100
90
80
70
60
50
40
30
20
10
Exposed
DC
Power
Interface
+
-
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 200 400 600
Voltage (V)
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 100 600
Voltage (V)
200 300 400 500
Current (kA)
Voltage (V)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
700
500
600
200
300
400
100
0
-100
01050
Time (µs)
20 30 40
Current
Voltage
Current
Voltage
Current (A)
Voltage (V)
3.5
2.0
2.5
3.0
0.5
1.0
1.5
0
-0.5
700
400
500
600
100
200
300
0
-100
05 40
Time (µs)
10 2015 25 30 35
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
Current
Voltage
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
T
Current
Voltage
120
0
0
25 50 10075 125 150 175
Ambient Temperature (°C)
Percent of Rated Value
Percent of V
BR
Change
16
6
8
10
12
14
0
2
4
-4
-6
-8
-40
-20 0 20 40 60 80 100 120 140 160
Junction Temperature (T
J
) - °C
25 °C
20
40
60
80
100
120
0
03
0252015105
IPP – Peak Pulse Current (% of IPP)
t – Time (µs)
Test Waveform Parameters
tt = 8 µs
t
d = 20 µs
tt
e
t
td = t
|
IPP/2
110
100
90
80
70
60
50
40
30
20
10
Exposed
DC
Power
Interface
+
-
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 200 400 600
Voltage (V)
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 100 600
Voltage (V)
200 300 400 500
Current (kA)
Voltage (V)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
700
500
600
200
300
400
100
0
-100
01050
Time (µs)
20 30 40
Current
Voltage
Current
Voltage
Current (A)
Voltage (V)
3.5
2.0
2.5
3.0
0.5
1.0
1.5
0
-0.5
700
400
500
600
100
200
300
0
-100
05 40
Time (µs)
10 2015 25 30 35
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
Current
Voltage
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
T
Current
Voltage
120
0
0
25 50 10075 125 150 175
Ambient Temperature (°C)
Percent of Rated Value
Percent of V
BR
Change
16
6
8
10
12
14
0
2
4
-4
-6
-8
-40
-20 0 20 40 60 80 100 120 140 160
Junction Temperature (T
J
) - °C
25 °C
20
40
60
80
100
120
0
03025201510
5
IPP – Peak Pulse Current (% of IPP)
t – Time (µs)
Test Waveform Parameters
tt = 8 µs
t
d = 20 µs
tt
e
t
td = t
|
IPP/2
110
100
90
80
70
60
50
40
30
20
10
Typical Waveform Under Surge
Exposed
DC
Power
Interface
+
-
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 200 400 600
Voltage (V)
Current (kA)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
0 100 600
Voltage (V)
200 300 400 500
Current (kA)
Voltage (V)
3.5
2.5
3.0
1.0
1.5
2.0
0.5
0
-0.5
700
500
600
200
300
400
100
0
-100
01050
Time (µs)
20 30 40
Current
Voltage
Current
Voltage
Current (A)
Voltage (V)
3.5
2.0
2.5
3.0
0.5
1.0
1.5
0
-0.5
700
400
500
600
100
200
300
0
-100
05 40
Time (µs)
10 2015 25 30 35
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
Current
Voltage
Current (kA)
Voltage (V)
3.5
1.5
2
3
0.5
1
0
-0.5
140
60
80
120
2.5
100
20
40
0
-20
04 40
Time (µs)
81612 20 24 28 32 36
T
Current
Voltage
120
0
0
25 50 10075 125 150 175
Ambient Temperature (°C)
Percent of Rated Value
Percent of V
BR
Change
16
6
8
10
12
14
0
2
4
-4
-6
-8
-40
-20 0 20 40 60 80 100 120 140 160
Junction Temperature (T
J
) - °C
25 °C
20
40
60
80
100
120
0
03025201510
5
IPP – Peak Pulse Current (% of IPP)
t – Time (µs)
Test Waveform Parameters
tt = 8 µs
t
d
= 20 µs
tt
e
t
td = t
|
IPP/2
05
040302010
t – Time (µs)
Current
Voltage
110
100
90
80
70
60
50
40
30
20
10
REV. 04/17
Product Dimensions
PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes
Typical Part Marking
PTVS3-380C-TH .......................................................................3380
PTVS3-430C-TH .......................................................................3430
DIMENSIONS:
MM
(INCHES)
Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead nish conforms to the solderability requirements of JESD22-B102,
Pb free solder. Package dimensions are shown below:
How to Order
PTVS 3 - 380 C - T H
Series
PTVS = Power TVS High Current Diode
Peak Current Rating
3 = 3 kA
Repetitive Standoff Voltage
380 = 380 V
430 = 430 V
Sufx
C = Bidirectional Device
Package
T = Through-Hole
Temperature
H = High Temperature Series
Dim. PTVS3-380C-TH PTVS3-430C-TH
A
24.15 ± 0.72
(0.951 ± 0.028)
B
2.40 ± 0.50
(0.094 ± 0.020)
C
1.75 ± 1.25
(0.069 ± 0.049)
D
10.80
(0.425)
Max.
E
1.25 ± 0.05
(0.049 ± 0.002)
F
9.30
(0.366)
Max.
G
16.50
(0.650)
Max.
H
6.00 ± 1.00
(0.236 ± 0.039)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
D
C
H
G
A
F
E
B
P1-P3

PTVS3-380C-TH

Mfr. #:
Buy PTVS3-380C-TH
Manufacturer:
Bourns
Description:
TVS Diodes / ESD Suppressors 3kA 380V PTVS Diode Bidirectional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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