PESD5V0V1BCSF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 2 September 2011 4 of 13
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5;
see Figure 1
.
[2] Measured from pin 1 to pin 2.
[3] Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
[4] This parameter is guaranteed by design.
[5] Calculated from S-parameter values.
[6] Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff
voltage
5- 5 V
I
RM
reverse leakage
current
V
RWM
= 5 V - 1 100 nA
V
CL
clamping voltage I
PP
=0.5A
[1][2]
--11.5V
I
PP
=1A
[1][2]
- - 12.8 V
V
BR
breakdown voltage I
R
=1mA
[3]
6- 10V
I
R
= 1mA
[3]
10 - 6V
C
d
diode capacitance f = 1 MHz
[4]
V
R
= 0 V 4 5.3 6 pF
V
R
= 2.5 V - 4.3 5 pF
V
R
= 5 V - 4.1 4.7 pF
L
S
series inductance
[5]
-0.05-nH
R
dyn
dynamic resistance
[6]
-2.5-
