APTGF150A120T3AG Datasheet APTGF150A120T3AG | P1-P3

APTGF150A120T3AG

APTGF150A120T3AG – Rev 1 October, 2012

www.microsemi.com

1

–

6

29 1330 31 32

R1

2322

28

25

2726

7

8

3

4

1816 2019 14

16

15

182023 22

13

11

12

14

87

29

30

28 27 26

3

32

31

10

19

2

25

4

Pins 29/30/31/32 must be shorted together

Pins 26/27/28/22/23/25 must be shorted together

to achieve a phase leg

Pins 16/18/19/20 must be shorted together

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200

V

T

C

= 25°C

210

I

C

Continuous Collector Current

T

C

= 100°C

150

I

CM

Pulsed Collector Current T

C

= 25°C 300

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

1041 W

RBSOA Reverse Bias Safe Operating Area

T

J

= 150°C

300A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Non Punch Through (NPT) Fast IGBT

- Low voltage drop

- Low tail current

- Switching frequency up to 50 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Very low stray inductance

 Kelvin emitter for easy drive

 Internal thermistor for temperature monitoring

 High level of integration

 AlN substrate for improved thermal performance

Benefits

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Phase leg

NPT IGBT Power Module

Power Module

V

CES

= 1200V

I

C

= 150A @ Tc = 100°C

APTGF150A120T3AG

APTGF150A120T3AG – Rev 1 October, 2012

www.microsemi.com

2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 250 µA

T

j

= 25°C 3.2 3.7

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 150A

T

j

= 125°C 3.9

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 6mA 4.5 5.5 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 9.3

C

oes

Output Capacitance 1.4

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

0.7

nF

Q

G

Gate charge

V

GE

= ±15V ; V

CE

=600V

I

C

=150A

1.6 µC

T

d(on)

Turn-on Delay Time 120

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 310

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 150A

R

G

= 5.6

20

ns

T

d(on)

Turn-on Delay Time 130

T

r

Rise Time 60

T

d(off)

Turn-off Delay Time 360

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 150A

R

G

= 5.6

30

ns

E

on

Turn-on Switching Energy T

j

= 125°C 18

E

off

Turn-off Switching Energy

V

GE

= ±15V

V

Bus

= 600V

I

C

= 150A

R

G

= 5.6

T

j

= 125°C 8

mJ

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 900V

t

p

≤ 10µs ; T

j

= 125°C

900 A

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 150

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 125°C 600

µA

I

F

DC Forward Current

Tc = 100°C

120 A

I

F

= 120A 2.5 3

I

F

= 240A 3

V

F

Diode Forward Voltage

I

F

= 120A

T

j

= 125°C

1.8

V

T

j

= 25°C 265

t

rr

Reverse Recovery Time

T

j

= 125°C 350

ns

T

j

= 25°C 1120

Q

rr

Reverse Recovery Charge

I

F

= 120A

V

R

= 800V

di/dt =400A/µs

T

j

= 125°C 5780

nC

APTGF150A120T3AG

APTGF150A120T3AG – Rev 1 October, 2012

www.microsemi.com

3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.12

R

thJC

Junction to Case Thermal Resistance

Diode

0.37

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 110 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

SP3 Package outline (dimensions in mm)

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGF150A120T3AG

APTGF150A120T3AG

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