VS-ETL1506STRRHM3

VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 20-Apr-15
1
Document Number: 95868
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 15 A FRED Pt
®
FEATURES
State of the art low forward voltage drop
Ultrafast recovery time
175 °C operating junction temperature
Low leakage current
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified, meets JESD 201 class 1
whisker test
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art, ultralow V
F
, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
(typ.) 0.85 V
t
rr
(typ.) 60 ns
T
J
max. 175 °C
Diode variation Single die
VS-ETL1506SHM3 VS-ETL1506-1HM3
TO-262
N/C
Anode
1
3
2
D
2
PA K
Anode
1
3
Base
cathode
2
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 152 °C 15
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 0.99 1.07
I
F
= 15 A, T
J
= 150 °C - 0.85 0.91
Reverse leakage current I
R
V
R
= V
R
rated - 0.01 15
μA
T
J
= 150 °C, V
R
= V
R
rated - 6 100
Junction capacitance C
T
V
R
= 600 V - 12 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 20-Apr-15
2
Document Number: 95868
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 110
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 185 270
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 210 -
T
J
= 125 °C - 290 -
Peak recovery current I
RRM
T
J
= 25 °C - 20 -
A
T
J
= 125 °C - 26 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 2.2 -
μC
T
J
= 125 °C - 4.0 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance, junction to case R
thJC
-1.31.51°C/W
Thermal resistance, junction to ambient R
thJA
Typical socket mount - - 70
Thermal resistance, case to heatsink R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK modified ETL1506SH
Case style TO-262 ETL1506-1H
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
I
R
- Reverse Current (μA)
100 200 300 400 500 600
0.0001
0.001
0.01
0.1
1
10
100
150 °C
175 °C
25 °C
50 °C
75 °C
125 °C
100 °C
V
R
-
Reverse Voltage (V)
VS-ETL1506SHM3, VS-ETL1506-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 20-Apr-15
3
Document Number: 95868
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
0 100 200 300 400 500 600
1
10
100
1000
V
R
-
Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
10
1
Z
thJC
-
Thermal Impedance (°C/W)
t
1
-
Rectangular Pulse Duration (s)
0 4 8 12 16 20 24
130
140
150
160
170
180
DC
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0 4 8 12 16 20 24
0
5
10
15
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
I
F(AV)
- Average Forward Current (A)
RMS Limit

VS-ETL1506STRRHM3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers Freds - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union