Characteristics BAR42, BAR43
2/7 DocID3288 Rev 4
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
DRM
Repetitive peak off-state voltage 30 V
I
F(AV)
Continuous forward current 0.1 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 0.75 A
P
tot
Power dissipation
(1)
1. For double diodes, P
tot
is the total dissipation of both diodes
T
amb
= 25 °C 250 mW
T
stg
Maximum Storage temperature range - 65 to + 150 °C
T
j
Maximum operating junction temperature
(2)
2. condition to avoid thermal runaway for a diode on its own heatsink.
150 °C
T
L
Maximum temperature for soldering during 10 s 260 °C
Table 3. Thermal parameter
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
(1)
1. Mounted on epoxy board with recommended pad layout.
500 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR
Breakdown
voltage
T
j
= 25 °C I
R
= 100 µA 30 V
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
500 nA
T
j
= 100 °C 100 µA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage
drop
T
j
= 25 °C
BAR42
I
F
= 10 mA 0.35 0.40
V
I
F
= 50 mA 0.50 0.65
BAR43
I
F
= 2 mA 0.26 0.33
I
F
= 15 mA 0.45
ALL I
F
=100 mA 1
