PUMH4,115

2004 Apr 14 3
NXP Semiconductors Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PEMH4; PUMH4
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PEMH4 Plastic surface mounted package; 6 leads SOT666
PUMH4 Plastic surface mounted package; 6 leads SOT363
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
collector-base voltage open emitter 50 V
V
CEO
collector-emitter voltage open base 50 V
V
EBO
emitter-base voltage open collector 5 V
I
O
output current (DC) 100 mA
I
CM
peak collector current 100 mA
P
tot
total power dissipation T
amb
25 °C
SOT363 note 1 200 mW
SOT666 notes 1 and 2 200 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C
Per device
P
tot
total power dissipation T
amb
25 °C
SOT363 note 1 300 mW
SOT666 notes 1 and 2 300 mW
2004 Apr 14 4
NXP Semiconductors Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PEMH4; PUMH4
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
R
th(j-a)
thermal resistance from junction to ambient T
amb
25 °C
SOT363 note 1 625 K/W
SOT666 notes 1 and 2 625 K/W
Per device
R
th(j-a)
thermal resistance from junction to ambient T
amb
25 °C
SOT363 note 1 416 K/W
SOT666 notes 1 and 2 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 1 μA
V
CE
= 30 V; I
B
= 0; T
j
= 150 °C 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 1 mA 200
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA 150 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz 2.5 pF
2004 Apr 14 5
NXP Semiconductors Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PEMH4; PUMH4
PACKAGE OUTLINE
UNIT b
p
cD
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
IEC JEDEC JEITA
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
b
p
pin 1 index
D
e
1
e
A
L
p
detail X
H
E
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface-mounted package; 6 leads SOT66
6
YS
w M
A

PUMH4,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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