2N6338, 2N6341
http://onsemi.com
3
Figure 2. Switching Time Test Circuit
1000
0.3
Figure 3. Turn−On Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (ns)
500
100
70
50
10
0.5 0.7 2.0 3.0 7.0 30
+ 11 V
0
V
CC
SCOPE
R
B
10 OHMS
- 5.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
8.0 OHMS
20
30
5.0 20
10 μs
- 9.0 V
700
200
300
1.0 10
NOTE: For information on Figures 3 and 6, R
B
and R
C
were
varied to obtain desired test conditions.
+ 80 V
1N4933
t
d
@ V
BE(off)
= 6.0 V
V
CC
= 80 V
I
C
/I
B
= 10
T
J
= 25°C
t
r
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
θ
JC
= r(t) θ
JC
θ
JC
= 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3 3.0 30 300
100
2.0
Figure 5. Active Region Safe Operating Area
50
5.0
0.01
10 20 70 200
T
J
= 200°C
2N6338
2N6341
0.1
10
0.5
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
0.2
50 100
200 μs
5.0 ms
1.0 ms
dc
2.0
0.02
0.05
1.0
3.0 5.0 307.0
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN
LIMITED CURVES APPLY
BELOW RATED V
CEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
