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FMU-G26S

P1-P3P4-P5
SANKEN ELECTRIC CO., LTD. RY2A
090113
1／5
61426-01
1. Scope
The present specifications shall apply to an RY2A
2. Outline
Type
Silicon Diode
Structure
Resin Molded Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
SANKEN ELECTRIC CO., LTD. RY2A
090113
2／5
61426-01
3. Absolute maximum ratings
No.
Item
Symbol
Unit
Conditions
1
Transient Peak Reverse Voltage
V
RSM
V
2
Peak Reverse Voltage
V
RM
V
3
Average Forward Current
I
F (AV)
A
Refer to Derating of 6
4
Peak Surge Forward Current
I
FSM
A
10msec.
Half sinewave, one shot
5
I
2
t Limiting Value
I
2
t
A
2
s
1ms≤t≤10ｍs
6
Junction Temperature
T
j
°C
7
Storage Temperature
T
stg
°C
4. Electrical characteristics (Ta=25°C, unless otherwise specified)
No
Item
Symbol
Unit
Value
Conditions
1
Forward Voltage Drop
V
F
V
1.15 max.
I
F
= 3A
2
Reverse Leakage Current
I
R
uA
10 max.
V
R
=V
RM
3
Reverse Leakage Current Under
High Temperature
H･I
R
mA
1.0 max.
V
R
=V
RM
, T
j
=150°C
4
Reverse Recovery Time
trr1
ns
200 max.
I
F
=I
RP
=100mA
90% Recovery point, T
j
=25°C
trr2
ns
100 max.
I
F
=100mA,I
RP
=200mA,
75% Recovery point ,T
j
=25°C
5
Thermal Resistance
R
th (j-c)
°C /W
12 max.
Between Junction and lead
SANKEN ELECTRIC CO., LTD. RY2A
090113
3／5
61426-01
5. Characteristics
I
F(AV)
- P
F
P
F
(W)
Forward Power Dissipation (W)
0.0
1.0
2.0
3.0
4.0
5.0
0 0.5 1 1.5 2 2.5 3
I
F(AV)
(A)
Average Forward Current (A)
V
R
- P
R
P
R
(W)
Reverse Power Dissipation (W)
0
0.1
0.2
0.3
0.4
0.5
0.6
0 100 200 300 400 500 600
V
R
(V)
Reverse Voltage (V)
Tj=150°C
t
T
t/T=1/6
t/T=1/3,sinewave
t/T=1/2
DC
Tj=150°C
t
T
1-t/T=5/6
sinewave
1-t/T=2/3
1-t/T=1/2
P1-P3P4-P5

FMU-G26S

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DIODE GEN PURP 600V 10A TO220F
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