OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PUMH20,115

P1-P3P4-P6P7-P9P10-P10
PEMH20_PUMH20_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 15 November 2009 3 of 9
NXP Semiconductors
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
5. Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage
positive - +12 V
negative - −10 V
I
O
output current (DC) - 100 mA
I
CM
peak collector current - 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
-200mW
SOT666
[1][2]
-200mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
-300mW
SOT666
[1][2]
-300mW
PEMH20_PUMH20_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 15 November 2009 4 of 9
NXP Semiconductors
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
--625K/W
SOT666
[1][2]
--625K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
--416K/W
SOT666
[1][2]
--416K/W
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= 50 V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
= 0 A --1μA
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150 °C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A --2mA
h
FE
DC current gain V
CE
= 5 V; I
C
= 20 mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 1 mA - 1.2 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 20 mA 2 1.6 - V
R1 bias resistor1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f=1MHz
--2.5pF
PEMH20_PUMH20_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 15 November 2009 5 of 9
NXP Semiconductors
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
V
CE
= 5 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= 0.3 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
V
CE
= 5 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
I
C
(mA)
10
−1
10
2
101
006aaa015
10
2
10
10
3
h
FE
1
(3)
(2)
(1)
I
C
(mA)
110
2
10
006aaa014
10
2
10
3
V
CEsat
(mV)
10
(1)
(3)
(2)
I
C
(mA)
10
−1
10
2
101
006aaa016
10
1
10
2
V
I(on)
(V)
10
−1
(1)
(3)
(2)
006aaa017
I
C
(mA)
10
−2
10110
−1
1
10
V
I(off)
(V)
10
−1
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P10

PUMH20,115

Mfr. #:
Buy PUMH20,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet