© 2009 IXYS CORPORATION, All rights reserved
IXGH30N120C3H1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
4 6 8 10 12 14 16 18 20 22 24 26 28 30
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
9
10
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 48A
I
C
= 24A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
0
50
100
150
200
250
300
350
400
450
500
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
-
Nanoseconds
60
70
80
90
100
110
120
130
140
150
160
t
d(off)
-
Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 48A
I
C
= 24A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
240
260
280
300
320
340
360
380
4 6 8 1012141618202224262830
R
G
- Ohms
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 48A
I
C
= 24A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
10 15 20 25 30 35 40 45 50
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 48A
I
C
= 24A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
0
50
100
150
200
250
300
350
400
450
500
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
f
- Nanoseconds
65
80
95
110
125
140
155
170
185
200
215
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
