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TD350E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
DocID018539 Rev 3
13/18
TD350E
Typical performanc
e curves
18
7
T
ypical performance curves
Figure 8. Supply current vs. te
mperature
Figure 9. Low level output volt
age vs. temp.
Figure 10. Desaturat
ion threshold vs. temp
.
Figure 1
1. V
oltage refer
ence vs. temperature
Figure 12. High level out
put volt
age vs.
temperature
Figure 13. Desaturation sourc
e current vs.
temperature
0.0
1.0
2.0
3.0
4.0
5.0
-
50
-25
0
25
5
0
75
100
125
Te
mp (°
C)
In (
m
A)
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Application diagrams
TD350E
14/18
DocID018539 Rev 3
8 Application
diagrams
Figure 14. Single supply IGBT drive with
ac
tive Miller clamp and 2-level turn-off
Figure 15. Large IGBT drive wit
h negative
gate drive an
d desaturation det
ection
Figure 16. Use of DESA
T input for direct overcurrent detection
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DocID018539 Rev 3
15/18
TD350E
Package informa
tion
18
9 Package
information
In order to meet environ
mental requ
irements, ST of
fers these devices in different grades of
ECOP
ACK
®
packages, dependin
g on their level of environment
al compliance. ECOP
ACK
specifications, grade definitions a
nd product status are available at:
www
.st.c
om
.
ECOP
ACK is an ST trademark.
Figure 17. Package SO-
14 p
ackage outline
62
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
TD350E
Mfr. #:
Buy TD350E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Advanced IGBT/MOSFET driver
Lifecycle:
New from this manufacturer.
Delivery:
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