13
+
_
V
CC
= 15V
0.1μF
R
g
Q1
Q2
+
V
CE
-
R
PULL-DOWN
+ HVDC
-HVDC
3-PHASE
AC
+
V
CE
-
+
_
V
EE
= -5V
5V
+
_
270Ω
1
3
2
4
8
6
7
5
Figure 26. ACNW3190typical application circuit with negative IGBT gate drive
Selecting the Gate Resistor (Rg) to minimize IGBT
Switching Losses.
Step 1: Calculate Rg Minimum from the I
OL
Peak Speci cation
The IGBT and Rg in Figure 26 can be analyzed as a simple
RC circuit with a voltage supplied by the ACNW3190. The
operating temperature is 100°C.
OLPEAK
OLEECC
I
VVV
Rg
)(
A
VVV
4
)5.3515( +
=
Ω 3.4
The VOL value of 3.5V in the previous equation is a con-
servative value of VOL at the peak current of 4.0A (see
Figure 6). At lower Rg values the voltage supplied by the
ACNW3190 is not an ideal voltage step. This results in
lower peak currents (more margin) than predicted by this
analysis. When negative gate drive is not used, V
EE
in the
previous equation is equal to zero volts.
Step 2: Check the ACNW3190 Power Dissipation and Increase
Rg if Necessary.
The ACNW3190 total power dissipation (PT) is equal to
the sum of the emitter power (PE) and the output power
(PO):
P
T
= P
E
+ P
O
P
E
= I
F
* V
F
* Duty Cycle
P
O
= P
O(BIAS)
+ P
O (SWITCHING)
= I
CC
* (V
CC
- V
EE
) + E
SW
(R
G
, Q
G
) * f
For the circuit in Figure 26 with I
F
(worst case) = 16 mA,
Rg = 4.3, Max Duty Cycle = 80%, Qg = 1000 nC, f = 15
kHz and T
A
max = 85°C:
P
E
= 16 mA * 1.95V * 0.8 = 25 mW
P
O
= 3.25 mA * 20 V + 13J * 15 kHz
= 65 mW + 195 mW
= 260 mW
< 728 mW (P
O(MAX)
@ 85°C = 800 mW-15C*4.8 mW/C)
The value of 3.25 mA for ICC in the previous equation was
obtained by derating the ICC max of 5 mA to ICC max at
100C (see Figure 7).
The above computation shows that the power dissipation
is within the speci ed limits. However, designers should
verify that the thermal limits have not been violated by
using the thermal model provided in this datasheet. This
thermal model obtained based on JEDEC speci cation.
PE Parameter Description
I
F
LED Current
V
F
LED On Voltage
Duty Cycle Maximum LED Duty Cycle
P
O
Parameter Description
I
CC
Supply Current
V
CC
Positive Supply Voltage
V
EE
Negative Supply Voltage
E
SW
(Rg,Qg) Energy Dissipated in the HCPL-3120 for
each IGBT Switching Cycle (See Figure 27)
f Switching Frequency
14
Figure 27. Energy dissipated in the ACWN3190 for each IGBT switching cycle
Under Voltage Lockout Feature
The ACNW3190 contains an under voltage lockout
(UVLO) feature that is designed to protect the IGBT
under fault conditions which cause the ACNW3190
supply voltage (equivalent to the fully-charged IGBT
gate voltage) to drop below a level necessary to keep
the IGBT in a low resistance state. When the ACNW3190
output is in the high state and the supply voltage drops
below the ACNW3190 V
UVLO– threshold
(9.5 < V
UVLO
<
12.0) the optocoupler output will go into the low state
with a typical delay, UVLO Turn O Delay, of 0.6 s. When
the ACNW3190 output is in the low state and the supply
voltage rises above the ACNW3190 V
UVLO+ threshold
(11.0
< V
UVLO+
< 13.5) the optocoupler output will go into the
high state (assumes LED is “ON”) with a typical delay,
UVLO Turn On Delay of 0.8 s.
Figure 28. Under Voltage Lock Out
Thermal Model
Introduction
For application which requires an output gate current
more than 2A, adequate PCB pad heat-sink must be
provided to dissipate the power loss in the package.
Failure to provide proper heat dissipation will potentially
damage the gate drive after pro-long usage. This thermal
model allows designer to compute the temperature of
the LED and detector.
De nitions
θ1:Thermal impedance from LED junction to ambient
θ2:Thermal impedance from LED to detector (output IC)
θ3:Thermal impedance from detector (output IC) junction
to ambient
Ambient Temperature: Measured approximately 1.25 cm
above the optocoupler, with no forced air.
Description
This thermal model assumes that an 8-pin single-channel
plastic package optocoupler is soldered into a 7.62 cm x
7.62 cm printed circuit board (PCB). The temperature at
the LED and Detector junctions of the optocoupler can
be calculated using the equations below.
∆TEA = A11*PE + A12*PD
∆TDA = A21*PE + A22*PD
where,
∆TEA = Temperature di erence between ambient and
LED
∆TDA = Temperature di erence between ambient and
detector
PE = Power dissipation from LED
PD = Power dissipation from detector
A11, A12, A21, A22 thermal coe cients (units in °C/W)
are functions of the thermal impedances θ1, θ2, θ3 (See
Note 2).
Table 1. Thermal Model-B Coe cient Data (units in °C/W)
S (cm) A11 A12, A21 A22
1 218.9 39.31 55.3
2 200.6 29.8 45
4 198 23.59 41.7
Jedec Speci cations A11 A12, A21 A22
low K board 254 50.3 66.8
High K board 151.2 16.72 39.06
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0 10 20 30 40 50
Energy per cycle [ μJ ]
100 nC
500 nC
1000 nC
Rg [Ω]
V
O
– OUTPUT VOLTAGE – V
0
0
(V
CC
- V
EE
) – SUPPLY VOLTAGE – V
10
5
14
10 15
2
20
6
8
4
12
(12.3, 10.8)
(10.7, 9.2)
(10.7, 0.1)
(12.3, 0.1)
Figure 29. Thermal Model-B Diagram
Figure 30. Evaluation thermal board design
Figure 31. Thermal Coe cient Plot against S
Notes:
1. Maximum junction temperature for above parts: 150 °C.
2. A11 = θ1 || (θ2+ θ3); A12 = A21 = (θ1 θ2) / (θ1+ θ2 + θ3); A22 = θ3|| (θ2 + θ3).
0
50
100
150
200
250
300
0246
S (cm)
Thermal Coefficient
A11
A12/A21
A22
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Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-0598EN - July 5, 2012

ACNW3190-300E

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
Logic Output Optocouplers 5.0A IGBT Gate Drive
Lifecycle:
New from this manufacturer.
Delivery:
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