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IXBT42N170

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions and dimensions.
IXBH42N170
IXBT42N170
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 20 40 60 80 100 120 140 160
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 42A
I
G
= 10mA
Fig. 11. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100
110
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
110
120
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2008 IXYS CORPORATION, All rights reserved
IXBH42N170
IXBT42N170
IXYS REF: B_42N170(7N)10-07-08
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
0
40
80
120
160
200
240
280
320
360
20 25 30 35 40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100
200
300
400
500
600
700
800
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
160
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
300
400
500
600
700
800
900
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
260
280
300
320
340
360
380
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
300
400
500
600
700
800
900
1000
1100
1200
1300
20 25 30 35 40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
f
- Nanoseconds
240
260
280
300
320
340
360
380
400
420
440
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
80
120
160
200
240
280
320
360
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
300
400
500
600
700
800
900
1000
1100
1200
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
1200
1400
1600
1800
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 84A
I
C
= 42A
P1-P3P4-P5

IXBT42N170

Mfr. #:
Buy IXBT42N170
Manufacturer:
Littelfuse
Description:
IGBT Transistors BIMOSFET 1700V 75A
Lifecycle:
New from this manufacturer.
Delivery:
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