Nexperia
PESD6V5C1USF
Ultra low capacitance unidirectional ESD protection diode
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Nexperia B.V. 2017. All rights reserved
Product data sheet 17 December 2017 4 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 6.5 V
V
BR
breakdown voltage I
R
= 1 mA; T
amb
= 25 °C 7 8 11 V
I
RM
reverse leakage
current
V
RWM
= 6.5 V; T
amb
= 25 °C - 1 50 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C - 0.45 0.5 pF
I
PPM
= 9 A; t
p
= 8/20 µs; T
amb
= 25 °C [1] - - 3 V
I
PP
= 8 A; t
p
= TLP; T
amb
= 25 °C [2] - 2.2 - V
V
CL
clamping voltage
I
PP
= 16 A; t
p
= TLP; T
amb
= 25 °C [2] - 3 - V
R
dyn
dynamic resistance I
R
= 10 A; T
amb
= 25 °C [2] - 0.1 - Ω
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
006aaa407
- V
CL
- V
BR
- V
RWM
- I
RM
- I
R
- I
PP
V
I
P-N
-
+
Fig. 3. V-I characteristics for unidirectional ESD
protection diode
V
R
(V)
751 6420 3
aaa-027271
0.5
C
d
(pF)
0
0.1
0.2
0.3
0.4
f = 1 MHz; T
amb
= 25 °C
Fig. 4. Diode capacitance as a function of reverse
voltage; typical values