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IRF7101TRPBF

P1-P3P4-P6P7-P9
IRF7101PbF
C,
IRF7101PbF
10
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7101PbF
Fig 12b. Basic Gate Charge Waveform
Fig 12a. Gate Charge Test Circuit
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 11a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 11b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
P1-P3P4-P6P7-P9

IRF7101TRPBF

Mfr. #:
Buy IRF7101TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT DUAL NCh 20V 3.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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