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FDZ4670S

P1-P3P4-P6P7-P7
FDZ4670S N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
4
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
Figure 7.
0 1020304050
0
2
4
6
8
10
I
D
= 25A
V
DD
= 20V
V
DD
= 10V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
50
5000
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
200
DC
10s
1s
100ms
10ms
1ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 100
o
C/W
T
A
= 25
o
C
Figure 10.
10
-3
10
-2
10
-1
10
0
10
1
100 1000
1
10
100
1000
SINGLE PULSE
R
θJA
= 100
o
C/W
T
A
= 25
o
C
V
GS
= 10V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
2000
S i n g l e P u l s e M a x i m u m
Power Dissipation
Figure 11. Transient Thermal Response Curve
10
-3
10
-2
10
-1
10
0
10
1
100 1000
1E-3
0.01
0.1
1
SINGLE PULSE
R
θJA
= 100
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
J
= 25°C unless otherwise noted
FDZ4670S N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
5
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
Figure 22. FDZ4670S SyncFET body
diode reverse recovery characteristic
Figure 24. SyncFET body diode reverses
leakage versus drain-source voltage and
temperature
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Charateristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode in
parallel with a MOSFET. Figure 22 shows the reverse recovery
characteristic of the FDZ4670S.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDZ4670).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
Figure 23. Non-SyncFET (FDZ4670) body
diode reverse recovery characteristic
0.00001
0.0001
0.001
0.01
0.1
0 5 10 15 20 25 30 35
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE LEAKAGE CURRENT (A)
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 100
o
C
TIME : 12.5ns/div
CURRENT : 0.8A/div
CURRENT : 0.8A/div
TIME : 12.5ns/div
FDZ4670S N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
6
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
Dimensional Outline and Pad Layout
P1-P3P4-P6P7-P7

FDZ4670S

Mfr. #:
Buy FDZ4670S
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 25A 20FLFBGA
Lifecycle:
New from this manufacturer.
Delivery:
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