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SGP30N60HSXKSA1

P1-P3P4-P6P7-P9P10-P12
SGP30N60HS
SGW30N60HS
Power Semiconductors
4 Rev. 2.3 Sep 08
I
C
, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
80A
100A
T
C
=80°C
T
C
=110°C
I
C
, COLLECTOR CURRENT
1V 10V 100V 1000V
0.1A
1A
10A
100A
t
P
=4µs
15µs
200µs
1ms
50µs
DC
f, SWITCHING FREQUENCY
V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
j
≤ 150°C, D = 0.5, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 11Ω)
Figure 2. Safe operating area
(D = 0, T
C
= 25°C, T
j
≤ 150°C;
V
GE
=15V)
P
tot
, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
50W
100W
150W
2
00W
I
C
, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
40A
T
C
, CASE TEMPERATURE T
C
, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(V
GE
≤ 15V, T
j
≤ 150°C)
Limited by Bond wire
I
c
I
c
SGP30N60HS
SGW30N60HS
Power Semiconductors
5 Rev. 2.3 Sep 08
I
C
, COLLECTOR CURRENT
0V 2V 4V 6V
0A
10A
2
0A
3
0A
4
0A
5
0A
6
0A
7
0A
8
0A
5V
7V
9V
11V
13V
15V
V
GE
=20V
I
C
, COLLECTOR CURRENT
0V 2V 4V 6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
5V
7V
9V
11V
15V
13V
V
GE
=20V
V
CE
, COLLECTOR-EMITTER VOLTAGE
V
CE
, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
Figure 6. Typical output characteristic
(T
j
= 150°C)
I
C
, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
2
0A
4
0A
6
0A
8
0A
150°C
25°C
T
J
=-55°C
V
CE(sat),
COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
I
C
=60A
I
C
=30A
I
C
=15A
V
GE
, GATE-EMITTER VOLTAGE T
J
, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(V
CE
=10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
SGP30N60HS
SGW30N60HS
Power Semiconductors
6 Rev. 2.3 Sep 08
t, SWITCHING TIMES
0A 10A 20A 30A 40A 50A
10ns
1
00ns
t
r
t
d(on)
t
f
t
d(off)
t, SWITCHING TIMES
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω
10 ns
100 ns
t
f
t
r
t
d(off)
t
d(on)
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
J
=150°C,
V
CE
=400V, V
GE
=0/15V, R
G
=11Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
J
=150°C,
V
CE
=400V, V
GE
=0/15V, I
C
=30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
t
f
t
r
t
d(on)
t
d(off)
V
GE(th),
GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
min.
typ.
max.
T
J
, JUNCTION TEMPERATURE T
J
, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
=400V,
V
GE
=0/15V, I
C
=30A, R
G
=11Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I
C
= 0.7mA)
P1-P3P4-P6P7-P9P10-P12

SGP30N60HSXKSA1

Mfr. #:
Buy SGP30N60HSXKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT 600V 41A 250W TO220-3
Lifecycle:
New from this manufacturer.
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