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Document Number: 73103
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD19P06-60L
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= - 250 µA
- 60 V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 60 V, V
GS
= 0 V
- 1
µA
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 125 °C
- 50
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 175 ° C
- 150
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 10 V
- 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 10 V, I
D
= - 10 A
0.048 0.060
Ω
V
GS
= - 10 V, I
D
= - 16.8 A, T
J
= 125 °C
0.102
V
GS
= - 10 V, I
D
= - 16.8 A, T
J
= 175 °C
0.129
V
GS
= - 4.5 V, I
D
= - 5 A
0.061 0.077
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 10 A
22 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
1140 1710
pFOutput Capacitance
C
oss
130
Reverse Transfer Capacitance
C
rss
90
Total Gate Charge
Q
g
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 10 A
26 40
nCGate-Source Charge
Q
gs
4.5
Gate-Drain Charge
Q
gd
7.0
Gate Resistance
R
g
f = 1 MHz 7.0 Ω
Tur n - On D e lay T i me
c
t
d(on)
V
DD
= - 30 V, R
L
= 3 Ω
I
D
≅ - 19 A, V
GEN
= - 10 V, R
g
= 2.5 Ω
815
ns
Rise Time
c
t
r
915
Turn-Off Delay Time
c
t
d(off)
65 100
Fall Time
c
t
f
30 45
Drain-Source Body Diode Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
- 30
A
Pulsed Current I
SM
- 30
Forward Voltage
a
V
SD
I
F
= - 19 A, V
GS
= 0 V
- 1.0 - 1.5 V
Reverse Recovery Time
t
rr
I
F
= - 19 A, di/dt = 100 A/µs
41 61 ns
