ZXMN3B01F
SEMICONDUCTORS
ISSUE 1 - DECEMBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V I
D
=250A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 AV
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7 V I
D
=250A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.150
0.240
⍀
⍀
V
GS
=4.5V, I
D
=1.7A
V
GS
=2.5V, I
D
=1.2A
Forward Transconductance
(1) (3)
g
fs
4SV
DS
=15V,I
D
=1.7A
DYNAMIC
(3)
Input Capacitance C
iss
258 pF
V
DS
=15V,V
GS
=0V,
f=1MHz
Output Capacitance C
oss
50 pF
Reverse Transfer Capacitance C
rss
30 pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
2.69 ns
V
DD
= 15V, V
GS
=4.5V
I
D
=1A
R
G
≅ 6.0⍀
Rise Time t
r
3.98 ns
Turn-Off Delay Time t
d(off)
8ns
Fall Time t
f
5.27 ns
Total Gate Charge Q
g
2.93 nC
V
DS
=15V,V
GS
=4.5V,
I
D
=1.7A
Gate-Source Charge Q
gs
0.57 nC
Gate-Drain Charge Q
gd
0.92 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95 V T
J
=25°C, I
S
=1.7A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
10.85 ns T
J
=25°C, I
F
=1.3A,
di/dt= 100A/s
Reverse Recovery Charge
(3)
Q
rr
5NC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
