FDW2501N Rev E1(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
20 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
12
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µA
I
GSS
Gate–Body Leakage
V
GS
= ±12 V, V
DS
= 0 V ±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
0.4 0.9 1.5 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
-3.2
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 6.0 A
V
GS
= 2.5 V, I
D
= 5.0 A
V
GS
= 4.5 V, I
D
= 6.0A, T
J
=125°C
15.5
19.6
20
18
28
29
mΩ
I
D(on)
On–State Drain Current V
GS
= 4.5 V, V
DS
= 5 V 30 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 6.0 A 32 S
Dynamic Characteristics
C
iss
Input Capacitance 1290 pF
C
oss
Output Capacitance 315 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
170 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 2.0
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 10 18 ns
t
r
Turn–On Rise Time 15 27 ns
t
d(off)
Turn–Off Delay Time 26 47 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6 Ω
9.5 19 ns
Q
g
Total Gate Charge 12 17 nC
Q
gs
Gate–Source Charge 2.4 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, I
D
= 6.0 A,
V
GS
= 4.5 V
3.3 nC
Drain–Source Diode Characteristics and Maximum Ratings
t
rr
Diode Reverse Recovery Time 20 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 6.0 A,
d
iF
/d
t
= 100 A/µs
6.7 nC
I
S
Maximum Continuous Drain–Source Diode Forward Current 0.83 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.83 A (Note 2) 0.7 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
