Si1102
4 Rev. 1.0
1. Electrical Specifications
Table 1. Absolute Maximum Ratings
Parameter
Conditions Min Typ Max Units
Supply Voltage –0.3 5.5 V
Operating Temperature –55 85 °C
Storage Temperature –65 85 °C
Voltage on TXO with respect to
GND
–0.3 5.5 V
Voltage on all other Pins with
respect to GND
–0.3 VDD + 0.3 V
Maximum total current through
TXO (TXO Active)
——500mA
Maximum Total Current through
TXGD and VSS
——600mA
Maximum Total Current through
all other Pins
——100mA
ESD Rating Human body model 2 kV
Table 2. Recommended Operating Conditions
Parameter
Symbol Conditions/Notes Min Typ Max Units
Supply Voltage V
DD
–40 to +85 °C, V
DD
to VSS 2.2 3.3 5.25 V
Operating Temperature –40 25 85 °C
SREN High Threshold VIH VDD – 0.6 V
SREN Low Threshold VIL 0.6 V
Active TXO Voltage
1
——1.0V
Peak-to-Peak Power Supply
Noise Rejection
V
DD
=3.3V, 1kHz10MHz no
spurious PRX or less than 20%
reduction in range
50 mVPP
on V
DD
DC Ambient light Edc V
DD
=3.3V 1 100 klux
LED Emission Wavelength
2
600 850 950 nm
Notes:
1. Minimum R1 resistance should be calculated based on LED forward voltage, maximum LED current, LED voltage rail
used, and maximum active TXO voltage.
2. When using LEDs near the min and max wavelength limits, higher radiant intensities may be needed to achieve the
system's proximity sensing performance goals.
Si1102
Rev. 1.0 5
Table 3. Electrical Characteristics
Parameter
Symbol Conditions/Notes Min Typ Max Units
PRX Logic High Level
VOH V
DD
=3.3V, Iprx=4mA VDD 0.6 V
PRX Logic Low Level
VOL V
DD
= 3.3 V, Iprx = –4 mA 0.6 V
I
DD
Shutdown
I
DD
SREN = V
DD
, FR = 0,
V
DD
=3.3V
—0.11.0µA
I
DD
Average Current
SREN = 0 V, V
DD
= 3.3 V, FR = 0 30 120 200 µA
I
DD
Average Current
SREN = 0 V, V
DD
=3.3V,
FR = open
—520µA
I
DD
Current during Transmit,
Saturated Driver
V
DD
= 3.3 V, LED I = 100 mA 8 mA
I
DD
Current during Transmit,
Not Saturated
V
DD
= 3.3 V, LED I = 400 mA 5 14 30 mA
Sample Strobe Rate
1
FR V
DD
= 3.3 V, R2 = 0 100 250 600 Hz
Sample Strobe Rate
1
FR V
DD
=3.3V, R2=100k —730Hz
Sample Strobe Rate
1
FR V
DD
= 3.3 V, R2 = (open) 2 8 Hz
Min. Detectable
Reflectance Input
Emin V
DD
= 3.3 V, 850 nm source 1 µW/
cm
2
SREN Low to TXO Active
Tden V
DD
= 3.3 V 200 500 1000 µs
TXO Leakage Current
Itxo_sd V
DD
= 3.3 V, no strobe 0.01 1 µA
TXO Current
2
Itxo
1V
V
TXO
=1V, V
DD
= 3.3 V 100 380 600 mA
TXO Saturation Voltage
Vsat I
TXO =
I
TXO1V
x 80% 0.5 0.7 V
Notes:
1. Max column also applies to VDD > 3.6 V. See Figure 6.
2. When operating at VDD = 2.0 V, the typical TXO current is 250 mA.
Si1102
6 Rev. 1.0
2. Typical Application Schematic
Figure 1. Application Example of the Proximity Sensor Using a Single Supply
PRX
PRX
1
TXGD
2
3
TXO
4
DNC
VSS
FR
SREN
VDD
8
7
6
5
Si1102
VDD
VSS
C1 C2
C3
R3
TxLED
R1 R2
0.1 µF 10 µF
10 µF
5
100 k100 k
Note: R1 resistance should be factory-adjustable to achieve a consistent proximity object detection threshold across
different combinations of irLED, product window, and sensor sensitivity.

SI1102-A-GM

Mfr. #:
Manufacturer:
Silicon Labs
Description:
Proximity Sensors Infrared proximity sensor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet