ZXMS6006DT8TA

ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
4 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DT8
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Recommended Operating Conditions
The ZXMS6006DT8 is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol Min Max Unit
Input Voltage Range
V
IN
0 5.5 V
Ambient Temperature Range
T
A
-40 125 °C
High Level Input Voltage for MOSFET to be on
V
IH
3 5.5 V
Low Level Input Voltage for MOSFET to be off
V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred)
V
P
0 16 V
Thermal Characteristics
110
10m
100m
1
10
25X25X1.6mm FR4
Single 1oz Cu
One active die
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 active die
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
2 active die
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
25X25X1.6mm FR4
Single 1oz Cu
One active die
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25X25X1.6mm FR4
Single 1oz Cu
One active die
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
5 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DT8
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Static Characteristics
Drain-Source Clamp Voltage
V
DS
(
AZ
)
60 65 70 V
I
D
= 10mA
Off State Drain Current
I
DSS
- - 1
µA
V
DS
= 12V, V
IN
= 0V
- - 2
V
DS
= 36V, V
IN
= 0V
Input Threshold Voltage
V
IN
(
th
)
0.7 1 1.5 V
V
DS
= V
GS
, I
D
= 1mA
Input Current
I
IN
- 60 100
μA
V
IN
= +3V
- 120 200
V
IN
= +5V
Input Current while Over Temperature Active - - - 400
μA
V
IN
= +5V
Static Drain-Source On-State Resistance
R
DS(on)
- 85 125
mΩ
V
IN
= +3V, I
D
= 1A
- 75 100
V
IN
= +5V, I
D
= 1A
Continuous Drain Current (Notes 4 & 8)
I
D
2.0 - -
A
V
IN
= 3V; T
A
= 25°C
2.2 - -
V
IN
= 5V; T
A
= 25°C
Continuous Drain Current (Notes 4 & 7)
2.6 - -
V
IN
= 3V; T
A
= 25°C
2.8 - -
V
IN
= 5V; T
A
= 25°C
Current Limit (Note 10)
I
D(LIM)
4 8 -
A
V
IN
= +3V
6 13 -
V
IN
= +5V
Dynamic Characteristics
Turn On Delay Time
t
d
(
on
)
- 8.6 -
μs
V
DD
= 12V, I
D
= 1A, V
GS
= 5V
Rise Time
t
r
- 18 -
μs
Turn Off Delay Time
t
d
(
off
)
- 34 -
μs
Fall Time
f
f
- 15 -
μs
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 11)
T
JT
150 175 -
°C
-
Thermal Hysteresis (Note 11)
f
f
- 10 -
°C
-
Notes: 10. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated
outside saturation makes current limit unnecessary.
11. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
6 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DT8
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Typical Characteristics
0123456789101112
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.00
0.05
0.10
0.15
0.20
-50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
0.20
012345
0
20
40
60
80
100
120
0.4 0.6 0.8 1.0
0.01
0.1
1
10
3V
2.5V
2V
5V
4.5V
4V
3.5V
3V
Typical Output Characteristic
T
A
= 25°C
V
IN
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Threshold Voltage vs Temperature
V
IN
= V
DS
I
D
= 1mA
V
TH
Threshold Voltage (V)
T
J
Junction Temperature (°C)
T
J
= 150°C
On-Resistance vs Input Voltage
T
J
= 25°C
R
DS(on)
On-Resistance (Ω)
V
IN
Input Voltage (V)
I
D
= 1A
Reverse Diode Characteristic
V
IN
= 3V
V
IN
= 5V
On-Resistance vs Temperature
T
J
Junction Temperature (°C)
R
DS(on)
On-Resistance (Ω)
Input Current vs Input Voltage
I
IN
Input Current (μA)
V
IN
Input Voltage (V)
V
SD
Source-Drain Voltage (V)
I
S
Source Curent (A)
T
J
=25°C
T
J
=150°C

ZXMS6006DT8TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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