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MMBD914LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
August, 2017 − Rev. 9
1 Publication Order Number:
MMBD914LT1/D
MMBD914L
High-Speed Switching
Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
100 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
JA
417 °C/W
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
1
ANODE
3
CATHODE
MMBD914LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBD914LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
1
5D MG
G
5D = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SMMBD914LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBD914LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
www.onsemi.com
MMBD914L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 Adc)
V
(BR)
100 − Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
−
−
25
5.0
nAdc
Adc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
T
− 4.0 pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
− 1.0 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
− 4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMBD914L
www.onsemi.com
3
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
T
A
= 85°C
T
A
= -40°C
T
A
= 25°C
, REVERSE CURRENT ( A)
R
, DIODE CAPACITANCE (pF)
D
T
A
= 25°C
T
A
= 55°C
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
P1-P3P4-P4

MMBD914LT1G

Mfr. #:
Buy MMBD914LT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 100V 200mA
Lifecycle:
New from this manufacturer.
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