MC74HCT365ADG

© Semiconductor Components Industries, LLC, 2011
June, 2011 Rev. 1
1 Publication Order Number:
MC74HCT365A/D
MC74HCT365A
Hex 3-State Noninverting
Buffer with Common
Enables and LSTTL
Compatible Inputs
HighPerformance SiliconGate CMOS
The MC74HCT365A is identical in pinout to the LS365. The device
inputs are compatible with LSTTL outputs.
This device is a highspeed hex buffer with 3state outputs and two
common activelow Output Enables. When either of the enables is
high, the buffer outputs are placed into highimpedance states. The
HCT365A has noninverting outputs.
Features
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 90 FETs or 22.5 Equivalent Gates
These are PbFree Devices*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAMS
SOIC16
D SUFFIX
CASE 751B
TSSOP16
DT SUFFIX
CASE 948F
1
16
1
16
1
16
HCT365AG
AWLYWW
HCT
365A
ALYWG
G
1
16
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MC74HCT365A
http://onsemi.com
2
Figure 1. Pin Assignment
Figure 2. Logic Diagram
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
A4
Y5
A5
OUTPUT
ENABLE 2
V
CC
Y3
A3
Y4
A1
Y0
A0
OUTPUT
ENABLE 1
GND
Y2
A2
Y1
A3
A4
A5
A0
A1
A2
2
4
6
10
12
14
OUTPUT ENABLE 1
1
15
PIN 16 = V
CC
PIN 8 = GND
OUTPUT ENABLE 2
Y3
Y4
Y5
Y0
Y1
Y2
3
5
7
9
11
13
FUNCTION TABLE
X = don’t care
Z = high impedance
Inputs Output
Enable
1
Enable
2AY
L
L
H
X
L
L
X
H
L
H
X
X
L
H
Z
Z
ORDERING INFORMATION
Device Package Shipping
MC74HCT365ADG SOIC16
(PbFree)
48 Units / Rail
MC74HCT365ADR2G SOIC16
(PbFree)
2500 Units / Reel
MC74HCT365ADTG TSSOP16*
(PbFree)
96 Units / Rail
MC74HCT365ADTR2G TSSOP16*
(PbFree)
2500 Units / Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently PbFree.
MC74HCT365A
http://onsemi.com
3
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 50 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 4.5 5.5 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature Range, All Package Types –55 +125
_C
t
r
, t
f
Input Rise/Fall Time (Figure 1) 0 500 ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol Parameter Test Conditions
V
CC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C v 125_C
V
IH
Minimum HighLevel Input
Voltage
V
out
= V
CC
– 0.1 V
|I
out
| v 20 μA
4.5
to
5.5
2.0 2.0 2.0 V
V
IL
Maximum LowLevel Input
Voltage
V
out
= 0.1 V
|I
out
| v 20 μA
4.5
to
5.5
0.8 0.8 0.8 V
V
OH
Minimum HighLevel Output
Voltage
V
in
= V
IH
|I
out
| v 20 μA
4.5 4.4 4.4 4.4
V
V
in
= V
IH
|I
out
| v 6.0 mA 4.5 3.98 3.84 3.70
V
OL
Maximum LowLevel Output
Voltage
V
in
= V
IL
|I
out
| v 20 μA
4.5 0.1 0.1 0.1
V
V
in
= V
IL
|I
out
| v 6.0 mA 4.5 0.26 0.33 0.40
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 4.5 ±0.1 ±1.0 ±1.0 μA
I
OZ
Maximum ThreeState
Leakage Current
Output in HighImpedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
4.5 ±0.5 ±5.0 ±10 μA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 μA
4.5 4 40 160 μA
DI
CC
Additional Quiescent Supply
Current
V
in
= 2.4V, Any One Input
V
in
= V
CC
or GND, Other Inputs
I
out
= 0mA
5.5
55°C 25 to 125°C
mA
2.9 2.4
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.

MC74HCT365ADG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers IC BUFF/DVR TRI-ST HEX
Lifecycle:
New from this manufacturer.
Delivery:
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