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ZTX618STOA

P1-P3P4-P4
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2  JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent h
FE
characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
*I
C
cont 3.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
10 A
Continuous Collector Current I
C
3.5 A
Base Current I
B
500 mA
Practical Power Dissipation* P
totp
1.5 W
Power Dissipation P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX618
ZTX618
C
B
E
E-Line
TO92 Compatible
D=1(D.C.)
D=0.2
D=0.1
D=0.05
D=0.5
Single Pulse
D=t1
tP
t1
tP
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms 10ms 100ms 10s 100s1s
160
120
80
40
0
Derating curve
T -Temperature
(° C)
M
ax
P
ow
er
Dissi
p
at
i
on
-
(W
a
t
t
s)
Ambi
e
nt
t
em
per
a
t
ur
e
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:
Junction to Ambient
1
Junction to Ambient
2
R
th(j-amb)1
R
th(j-amb)2
175
116
°C/W
°C/W
 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong
Zetex plc 1997
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet:
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
0.2
0
0.3
0
0.1
0.4
0.2
0.3
-55°C
100°C
25°C
I /I =50
I /I =10
I
/I =50
I
/I =100
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
I /I =50
V =2V
25°C
100°C
-55°C
V =2V
1.0
0.8
0.4
0.6
0.2
0
1.2
1
10
0.01
0.1
100V10V
1V0.1V
0
0.2
450
225
0.4
0.1
1mA
100mA10mA 1A
10A 10A
1A100mA10mA
1mA
10A1A10mA 100mA
1mA 1mA
100mA10mA 1A 10A
1mA
100mA10mA 1A
10A
0.4
0.8
0.6
0
1.0
100
µ
s
10ms
1s
DC
100ms
1ms
I
C
-Collector Current
I
C
-Collector Current I
C
-Collector Current
I
C
-Collector Current
I
C
-Collector Current
h
FE
v I
C
VBE(sat) v Ic
V
BE(on) v IC
VCE(sat) v IC VCE(sat) v IC
V
CE
- Collector Voltage
Safe Operating Area
Single Pulse Test Tamb=25C
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20 100 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 27 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
58.3 V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=16V
Emitter Cut-Off
Current
I
EBO
100 nA V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100 nA V
CES
=16V
Collector-Emitter
Saturation Voltage
V
CE(sat)
7
80
210
15
150
255
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.93 1.05 V I
C
=3.5A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.86 1.0 V I
C
=3.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
170
40
400
450
300
85
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition
Frequency
f
T
100 140 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
23 30 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
170 ns V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time t
(off)
400 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
ZTX618
ZTX618
0.2
0
0.3
0
0.1
0.4
0.2
0.3
-55°C
100°C
25°C
I /I =50
I /I =10
I
/I =50
I
/I =100
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
I /I =50
V =2V
25°C
100°C
-55°C
V =2V
1.0
0.8
0.4
0.6
0.2
0
1.2
1
10
0.01
0.1
100V10V
1V0.1V
0
0.2
450
225
0.4
0.1
1mA
100mA10mA 1A
10A 10A
1A100mA10mA
1mA
10A1A10mA 100mA
1mA 1mA
100mA10mA 1A 10A
1mA
100mA10mA 1A
10A
0.4
0.8
0.6
0
1.0
100
µ
s
10ms
1s
DC
100ms
1ms
I
C
-Collector Current
I
C
-Collector Current I
C
-Collector Current
I
C
-Collector Current
I
C
-Collector Current
h
FE
v I
C
VBE(sat) v Ic
V
BE(on) v IC
VCE(sat) v IC VCE(sat) v IC
V
CE
- Collector Voltage
Safe Operating Area
Single Pulse Test Tamb=25C
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20 100 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 27 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
58.3 V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=16V
Emitter Cut-Off
Current
I
EBO
100 nA V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100 nA V
CES
=16V
Collector-Emitter
Saturation Voltage
V
CE(sat)
7
80
210
15
150
255
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.93 1.05 V I
C
=3.5A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.86 1.0 V I
C
=3.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
170
40
400
450
300
85
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition
Frequency
f
T
100 140 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
23 30 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
170 ns V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time t
(off)
400 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
ZTX618
ZTX618
P1-P3P4-P4

ZTX618STOA

Mfr. #:
Buy ZTX618STOA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN High Gain
Lifecycle:
New from this manufacturer.
Delivery:
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