FDZ2553NZ Rev C (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
20 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
12
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µA
I
GSS
Gate–Body Leakage
V
GS
= ±12 V, V
DS
= 0 V
±10 µA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
0.6 0.9 1.5 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–0.3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 9.6 A
V
GS
= 2.5 V, I
D
= 7.9 A
V
GS
= 4.5 V, I
D
= 9.6 A, T
J
=125°C
12
16
16
14
20
24
mΩ
I
D(on)
On–State Drain Current V
GS
= 4.5 V, V
DS
= 5 V 10 20 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 9.6 A 45 S
Dynamic Characteristics
C
iss
Input Capacitance 1240
pF
C
oss
Output Capacitance 320 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
170 pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
2.1
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 10 20 ns
t
r
Turn–On Rise Time 14 26 ns
t
d(off)
Turn–Off Delay Time 26 42 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6 Ω
11 19 ns
Q
g
Total Gate Charge 13 18 nC
Q
gs
Gate–Source Charge 3 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, I
D
= 9.6 A,
V
GS
= 5 V
3 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 1.7 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.7 A (Note 2) 0.7 1.2 V
t
rr
Diode Reverse Recovery Time 20 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 9.6A,
d
iF
/d
t
= 100 A/µs
6 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
(a). R
θJA
= 60°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). R
θJA
= 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
